Speaker
Anja Himmerlich
(CERN)
Description
Deep Level Transient Spectroscopy (DLTS) as well as Thermally Stimulated Current (TSC) technique are powerful tools for the characterisation of e.g. radiation induced deep level defects in silicon detectors. These techniques, that are based on the analysis of relaxation as well as emission processes after carrier injection, provide information about defect concentrations, thermal activation energies and capture cross sections. This talk will give a short introduction into the fundamentals of both characterization techniques
