36th RD50 Workshop (CERN - - online Workshop)

Session

Detector Characterization, NIEL and Irradiation Facilities

3 Jun 2020, 14:00

33. Determination of the proton related damage on commercial and high-ohmic silicon pad diodes

Konstantinos Nikolopoulos (University of Birmingham (GB))

03/06/2020, 14:00

Radiation hardness of detector sensors and components is a major challenge for the success of the scheduled High Luminosity upgrade of the CERN Large Hadron Collider, and a world-wide campaign for sensor characterisation and qualification has been undertaken. By convention, effects of irradiation with beams of different particle species and energy, aiming to assess displacement damage in...

21. Fluence profiling at JSI TRIGA reactor irradiation facility

Valentina Sola (Universita e INFN Torino (IT))

03/06/2020, 14:20

In this contribution, we present an analysis of the flunece profile at the JSI TRIGA neutron reactor facility in Ljubljana.
For the study, 5$\times$5 array LGAD sensors are used, with 1.3$\times$1.3 mm${}^2$ pad area. The gain layer active doping has been extracted via C-V measurements for each pad before and after irradiation at 1.5$\cdot$10${}^{15}$ n${}_{eq}$/cm${}^2$, providing a precise...

14. Measurement of the charge collection for the irradiated ${\text{n}}^{+}\text{p}{\text{p}}^{+}$ pad diode in the region of the ${\text{n}}^{+}\text{p}$ interface

Mohammadtaghi Hajheidari (Hamburg University (DE))

03/06/2020, 14:40

The charge collection of two ${\text{n}}^{+}\text{p}{\text{p}}^{+}$ pad diodes for light with a wavelength of $660$ nm from a sub-nanosecond laser and $\alpha$-particles with energies, $E_{\alpha }$, between $1.5$ and $2.8$ MeV injected from the ${\text{n}}^{+}\text{p}$ side, has been measured. The diodes had an area of $25$ ${\text{mm}}^2$, a thickness of $150$ $\mu$m and a doping concentration of...

24. Timing resolution on a 3D silicon pixel detector

Dario De Simone (Universitaet Zuerich (CH))

03/06/2020, 15:00

We report the measurements of time resolution for double-sided 3D pixel sensor with a single cell of 50 $\mu$m x 50 $\mu$m fabricated at IMB-CNM. Measurements were conducted using a radioactive source at -20 and 20 degrees °C in a bias voltage range of 50-200 V.

Temporal resolution measurements are reported before and after irradiation of 8x10${}^{14}$ N${}_{eq}$/cm${}^2$ (1 Mev equivalent...

26. Investigation on the effects of trapped charge on the signal from subsequent laser pulses in irradiated p-type sensors

Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))

03/06/2020, 15:40

During edge-TCT studies on irradiated p-type sensors, a significant change on signal amplitude and shape from subsequent laser pulses has been observed, even with pulse repetition time of several microseconds.
We observed in particular a strong reduction of the collected signal, which can be due to a recombination with the previously trapped charge or to a significant change of the electric...

39. TPA-TCT -- Two Photon Absorption - Transient Current Technique

Moritz Oliver Wiehe (Albert Ludwigs Universitaet Freiburg (DE))

03/06/2020, 16:00

The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon...

40. 1550 nm Femtosecond Fiber Laser System for the Two-Photon Excitation of Transient Currents in Semiconductor Detectors

P. Pérez-Millán (FYLA LASER SL)

03/06/2020, 16:20

The Two Photon Absorption - Transient Current Technique, TPA-TCT is a powerful tool for spatially resolved inspection of semiconductor detectors. The nonlinear absorption of light is excited by femtosecond lasers that deliver photons of energy lower than the band-gap energy of the semiconductor material. Simultaneous absorption of 2 photons (the sum of their energies being higher than the...

27. [US] Measurement of the silicon effective band gap energy with the ATLAS pixel detector

Aidan Grummer (University of New Mexico (US))

03/06/2020, 16:40

Silicon sensor leakage currents are often used as a diagnostic tool for monitoring the bulk damage caused by non-ionizing energy loss. One of the key inputs to interpreting leakage current data is the effective band gap energy, which is used to correct for temperature variations in the current. Using dedicated temperature scans in 2017 and 2018, the effective band gap energy is measured for...