Speakers
Description
Speaker Prof. R. Schrimpf
Abstract of the presentation
The effects of radiation on electronic devices and systems have been an important area of research since the 1960s. Early researchers and practitioners were typically trained in physics and little specialized knowledge about the effects of radiation on semiconductor devices was available. This began to change in the 1950s, and especially the 1960s, as the semiconductor industry developed and the vulnerability of electronics to radiation became apparent. This culminated in the failure of Telstar 1, the first commercial communications satellite, and resulted in the establishment of the IEEE Nuclear and Space Radiation Effects Conference. This has become the primary source of information related to radiation effects and it was joined by RADECS, the European radiation effects conference, in 1989. There are not many dedicated radiation-effects educational programs, although there are several universities in the US and Europe with strong programs. This talk will discuss the components of typical radiation-effects educational programs and future opportunities. It will emphasize opportunities for students created by the emergence of commercial space programs and new particle accelerators.
Short biography - Prof R. D. Schrimpf
Ron Schrimpf is the Orrin H. Ingram Professor of Engineering at Vanderbilt and the founding Director of the Institute for Space and Defense Electronics (ISDE). Ron’s research activities focus on semiconductor device physics, particularly radiation effects and reliability in microelectronics and semiconductor devices. ISDE applies the research conducted in Vanderbilt’s Radiation Effects and Reliability (RER) Group to practical problems of designing devices, integrated circuits, and systems for operation in radiation environments. The RER Group at Vanderbilt is the largest of its type at any US University. Ron served as President of the IEEE Nuclear and Plasma Sciences Society and President of the Radiation Effects Steering Group. He is a Fellow of the IEEE and has received the Chancellor’s Cup, the Harvey Branscomb Distinguished Professor Award, and the Chancellor’s Award for Research.
Short biography - Prof. Kenneth F. Galloway
Kenneth F. Galloway is a Distinguished Professor of Engineering, Emeritus, at Vanderbilt University. He has participated in research on radiation effects in microelectronics for almost 50 years. His recent work has focused on silicon carbide power devices. Dr. Galloway is a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), the American Association for the Advancement of Science (AAAS), the American Physical Society (APS), and the American Society for Engineering Education (ASEE). He received the 2002 IEEE NPSS Radiation Effects Committee’s Radiation Effects Award, the 2007 IEEE NPSS Richard F. Shea Distinguished Member Award, and the 2016 RADECS Association Yuri Gagarin Award.
