Layout Effects in CMOS Photosensitive Devices in Radiation Environment

Speaker

Rico Jossel Maestro (KU Leuven - RADSAGA ESR11)

Description

Increase of dark current is one of the main problems of CMOS image sensors when exposed to ionizing radiation. This is very process and layout dependent. A test chip is designed that has arrays of pixels. Multiple photosensitive devices and layout configurations were included to reduce the dark current without affecting the optical sensitivity of the pixel. This presentation will discuss these configurations and the initial measurement results

Presentation materials