NIMP Bucharest-Magurele, Romania
Author in the following contributions
- LGAD irradiated with 1e19 1MeV n/cm2 - HRTEM annealing studies up to 350 oC
- Modelling of the Coulombic centres charge emission: electric field approximation comparison in simulating the measured TSC signal
- Bistability of the BiOi complex – a reason for the observed large scattering in the determined acceptor removal rates in irradiated p-type silicon
- Defects formed in boron-doped Si diodes after high energy electron irradiation
- The boron-oxygen (BiOi) defect complex induced by irradiation with 6 MeV electrons in p-type silicon diodes
- Current Deep Level Transient Spectroscopy (I-DLTS) technique applied to p-type silicon diodes for Acceptor Removal studies
