Name: The 38th RD50 Workshop ( online Workshop)
Start: 2021-06-21T09:00:00+02:00
End: 2021-06-23T19:00:00+02:00
Location: No location set

The 38th RD50 Workshop ( online Workshop)

from Monday 21 June 2021 (09:00) to Wednesday 23 June 2021 (19:00)

Monday 21 June 2021

09:00 Welcome to the 38th RD50 Workshop
Welcome to the 38th RD50 Workshop
09:00 - 09:20
09:20 Defect and Material Characterization - Acceptor removal studies
Defect and Material Characterization - Acceptor removal studies
09:20 - 13:00
Contributions

09:20 Defects formed in boron-doped Si diodes after high energy electron irradiation - Anja Himmerlich (CERN)

09:40 Current Deep Level Transient Spectroscopy (I-DLTS) technique applied to p-type silicon diodes for Acceptor Removal studies - Yana Gurimskaya (Universite de Geneve (CH))

10:00 The boron-oxygen (BiOi) defect complex induced by irradiation with 6 MeV electrons in p-type silicon diodes - Chuan Liao (Hamburg University (DE))

10:20 Bistability of the BiOi complex – a reason for the observed large scattering in the determined acceptor removal rates in irradiated p-type silicon - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

10:50 Modelling of the Coulombic centres charge emission: electric field approximation comparison in simulating the measured TSC signal - Lucian Filip (National Institute of Materials Physics)

11:10 Investigation of acceptor removal by 4-point probe and LTPL measurements - Kevin Lauer (CIS Institut fuer Mikrosensorik GmbH (DE))

11:30 Optical detection of single defects in silicon - Anaïs DREAU (Laboratoire Charles Coulomb, CNRS & University of Montpellier)

11:50 Update on radiation damage investigation of epitaxial p-type Silicon using Schottky / pn junctions - Christoph Thomas Klein (Carleton University (CA))

12:10 LGAD irradiated with 1e19 1MeV n/cm2 - HRTEM annealing studies up to 350 oC - Andrei Kuncser (National Institute of Materials Physics)

12:30 Discussion on defects and material characterization - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
13:55 Detector Characterization and Very High Fluence Experiments
Detector Characterization and Very High Fluence Experiments
13:55 - 17:00
Contributions

13:55 Time resolution of 4H-SiC PIN and simulation of 4H-SiC LGAD - Tao Yang (Chinese Academy of Sciences (CN))

14:15 Timing resolution simulation of 2D and 3D SiC devices - TAN Yuhang Yuhang Tan (Chinese Academy of Sciences (CN))

14:35 A new vision of I-V characteristics in irradiated Si sensors with heavily damaged regions - Elena Verbitskaya (Iofffe Institute)

14:55 First results from thin silicon sensors irradiated to extreme fluence - Valentina Sola (Universita e INFN Torino (IT))

15:30 Performance of Stitched Passive CMOS Strip Sensors - Marta Baselga (Deutsches Elektronen-Synchrotron (DE))

15:50 Full-size passive CMOS sensors for radiation tolerant hybrid pixel detectors - Yannick Manuel Dieter (University of Bonn (DE))

16:10 Comparison studies of heavily irradiated dielectrics for AC-coupled pixel detectors on MCz silicon - Shudhashil Bharthuar (Helsinki Institute of Physics (FI))

16:30 Discussion on High Fluences and Detector Characterization - Gianluigi Casse (University of Liverpool (GB))
18:00 Collaboration Board
Collaboration Board
18:00 - 20:00
Tuesday 22 June 2021
09:00 LGAD - Low Gain Avalanche Detectors
LGAD - Low Gain Avalanche Detectors
09:00 - 19:20
Contributions

09:00 Gain suppression mechanism observed in Low Gain Avalanche Detectors - Esteban Curras Rivera (CERN)

09:20 Study of gain suppression in LGADs using IBIC and TRIBIC - Maria Del Carmen Jimenez Ramos (Universidad de Sevilla (ES))

09:40 A comprehensive feasibility study on the utilisation of the Ion Beam Induced Charge (IBIC) Nuclear Microprobe Technique at the RBI for the LGAD's Characterization including the Interpad-Gap Measurements - Milos Manojlovic (University of Montenegro (ME))

10:00 The performance of IHEP-NDL and IHEP-IME LGAD sensors after neutron Irradiation - Mengzhao Li (Chinese Academy of Sciences (CN))

10:35 Studies of effective inter-pad distance of different HPK and FBK LGADs - Petja SKomina (Jozef Stefan Institute)

10:55 Characterization on the radiation hardness of USTC-1.1 LGADs - Chihao Li (University of Science and Technology of China (CN))

11:15 Radiation Tolerance study of AIDA2020v2 LGADs manufactured at IMB-CNM - Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))

11:35 Timing measurements on neutron-irradiated LGADs in epitaxial wafers - Jairo Villegas (Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC))

13:20 EPS-TIG event in Montenegro Invitation - Gordana Medin (Montenegro)

13:25 LGAD Development at Teledyne e2v for the LHC’s High-Luminosity (HL) Upgrade - Martin Gazi (University of Oxford)

13:45 Development of large-area LGADs for Space Application - Ashish Bisht1 (FBK)

14:05 iLGAD Sensor For X-Ray Applications - Albert Doblas Moreno

14:25 Principle of operation of an innovative new sensor for neutron detection based on resistive AC coupled LGAD - Luca Menzio (Universita e INFN Torino (IT))

14:45 Preliminary Test Results of LGADs from Teledyne e2v for the LHC’s High-Luminosity Upgrade - Jonathan Mulvey (University of Birmingham)

15:25 Test beam measurements of BNL and HPK AC-LGADs - Christopher Madrid (Fermi National Accelerator Lab. (US))

15:45 AC-LGAD novel geometries exploration by etching of metal on the surface AC-coupled pads - Simone Michele Mazza (University of California,Santa Cruz (US))

16:05 A new testing system for multipad RSD sensors based on a a new FAST ASIC - Filippo Miserocchi (UniTo - INFN)

16:25 Latest Results on charge sharing in AC-LGAD (aka RSD) - Hartmut Sadrozinski (University of California,Santa Cruz (US))

17:05 Discussion on LGAD - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Gregor Kramberger (Jozef Stefan Institute (SI)) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Nicolo Cartiglia (INFN Torino (IT)) Salvador Hidalgo (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
Wednesday 23 June 2021
09:00 3D sensors
3D sensors
09:00 - 10:20
Contributions

09:00 Response of 3D pixel sensors to grazing angle incident particles - Jordi Duarte Campderros (Universidad de Cantabria and CSIC (ES))

09:20 Time resolution of an irradiated 3D silicon pixel detector - Dario De Simone (Universitaet Zuerich (CH))

09:40 3D n-on-n detectors - OSCAR DAVID FERRER (Institute of Microelectronics of Barcelona)
10:20 TPA-TCT
TPA-TCT
10:20 - 13:30
Contributions

10:20 A table-top Two Photon Absorption – TCT system: Method and Setup - Moritz Oliver Wiehe (Albert Ludwigs Universitaet Freiburg (DE))

10:40 A table-top Two Photon Absorption – TCT system: experimental results - Sebastian Pape (Technische Universitaet Dortmund (DE))

11:00 New TPA-TCT system at JSI - Bojan Hiti (Jozef Stefan Institute (SI))

11:20 Observation of an inactive region in irradiated silicon diodes - Oscar Murzewitz (Universität Hamburg (UHH))

11:40 New results of edge-on measurements with electron beam on pad diodes - Mohammadtaghi Hajheidari (Hamburg University (DE))

12:00 Discussion: TCT techniques and 3D sensors - Gregor Kramberger (Jozef Stefan Institute (SI)) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Marcos Fernandez Garcia (Universidad de Cantabria and CSIC (ES)) Michael Moll (CERN)
13:30 LGAD Mortality Studies
LGAD Mortality Studies
13:30 - 15:00
Contributions

13:30 The mortality study on irradiated W36 LGADs and PINs for tuning the HV safety parameters and establishing the turning point for the irreversible breakdown (Part I): Using TCT-SPA with 800 nm of fs-laser at ELI - Gordana Lastovicka Medin (University of Montenegro (ME))

13:50 The mortality study on irradiated W36 LGADs and PINs for tuning the HV safety parameters and establishing the turning point for the irreversible breakdown (Part II): Using TCT-TPA with 1550 nm of fs-laser at ELI - Gordana Lastovicka Medin (University of Montenegro (ME))

14:10 Systematic study of heavily irradiated LGAD stability using the Fermilab Test Beam Facility - Ryan Heller (Fermi National Accelerator Lab. (US))

14:30 Discussion: LGAD mortality - Gregor Kramberger (Jozef Stefan Institute (SI)) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Nicolo Cartiglia (INFN Torino (IT))
15:00 Pixel Sensors and Monolithic devices
Pixel Sensors and Monolithic devices
15:00 - 18:35
Contributions

15:20 DAQ-ROC4Sens Update - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

15:40 Radiation hardness and development of a large electrode DMAPS design in a 150 nm CMOS process - Ivan Dario Caicedo Sierra (University of Bonn (DE))

16:00 Characterization of depleted monolithic active pixel sensors in 180 nm TowerJazz technology - Christian Bespin (University of Bonn (DE))

16:20 Status of the design of RD50-MPW3 ASIC - Raimon Casanova Mohr (IFAE - Barcelona (ES))

17:00 MPW2 testing in the RBI microbeam - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

17:20 The RD50-MPW2 High Voltage-CMOS sensor chip DAQ and preliminary testbeam results - Samuel Powell (University of Liverpool (GB))

17:40 Readout system and testbeam results of the RD50 MPW2 HV-CMOS pixel chip - Patrick Sieberer (Austrian Academy of Sciences (AT))

18:05 Discussion on Monolithic and Pixel sensors - Eva Vilella Figueras (University of Liverpool (GB))

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