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The 38th RD50 Workshop ( online Workshop)

from Monday, June 21, 2021 (9:00 AM) to Wednesday, June 23, 2021 (7:00 PM)


        : Sessions
    /     : Talks
        : Breaks
Jun 21, 2021
Jun 22, 2021
Jun 23, 2021
AM
9:00 AM
Welcome to the 38th RD50 Workshop - Michael Moll (CERN) (until 9:20 AM)
9:20 AM
Defect and Material Characterization - Acceptor removal studies - Ioana Pintilie (NIMP Bucharest-Magurele, Romania) (until 1:00 PM)
9:20 AM Defects formed in boron-doped Si diodes after high energy electron irradiation - Anja Himmerlich (CERN)  
9:40 AM Current Deep Level Transient Spectroscopy (I-DLTS) technique applied to p-type silicon diodes for Acceptor Removal studies - Yana Gurimskaya (Universite de Geneve (CH))  
10:00 AM The boron-oxygen (BiOi) defect complex induced by irradiation with 6 MeV electrons in p-type silicon diodes - Mr Chuan Liao (Hamburg University (DE))  
10:20 AM Bistability of the BiOi complex – a reason for the observed large scattering in the determined acceptor removal rates in irradiated p-type silicon - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)  
10:40 AM --- Coffee Break ---
10:50 AM Modelling of the Coulombic centres charge emission: electric field approximation comparison in simulating the measured TSC signal - Dr Lucian Filip (National Institute of Materials Physics)  
11:10 AM Investigation of acceptor removal by 4-point probe and LTPL measurements - Kevin Lauer (CIS Institut fuer Mikrosensorik GmbH (DE))  
11:30 AM Optical detection of single defects in silicon - Dr Anaïs DREAU (Laboratoire Charles Coulomb, CNRS & University of Montpellier)  
11:50 AM Update on radiation damage investigation of epitaxial p-type Silicon using Schottky / pn junctions - Christoph Thomas Klein (Carleton University (CA))  
12:10 PM LGAD irradiated with 1e19 1MeV n/cm2 - HRTEM annealing studies up to 350 oC - Dr Andrei Kuncser (National Institute of Materials Physics)  
12:30 PM Discussion on defects and material characterization - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)  
9:00 AM
LGAD - Low Gain Avalanche Detectors - Salvador Hidalgo (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC)) (until 7:20 PM)
9:00 AM Gain suppression mechanism observed in Low Gain Avalanche Detectors - Esteban Curras Rivera (CERN)  
9:20 AM Study of gain suppression in LGADs using IBIC and TRIBIC - Dr Maria Del Carmen Jimenez Ramos (Universidad de Sevilla (ES))  
9:40 AM A comprehensive feasibility study on the utilisation of the Ion Beam Induced Charge (IBIC) Nuclear Microprobe Technique at the RBI for the LGAD's Characterization including the Interpad-Gap Measurements - Milos Manojlovic (University of Montenegro (ME))  
10:00 AM The performance of IHEP-NDL and IHEP-IME LGAD sensors after neutron Irradiation - Mengzhao Li (Chinese Academy of Sciences (CN))  
10:20 AM --- Coffee Break ---
10:35 AM Studies of effective inter-pad distance of different HPK and FBK LGADs - Petja SKomina (Jozef Stefan Institute)  
10:55 AM Characterization on the radiation hardness of USTC-1.1 LGADs - Chihao Li (University of Science and Technology of China (CN))  
11:15 AM Radiation Tolerance study of AIDA2020v2 LGADs manufactured at IMB-CNM - Dr Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))  
11:35 AM Timing measurements on neutron-irradiated LGADs in epitaxial wafers - Jairo Villegas (Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC))  
11:55 AM --- Lunch Break ---
1:20 PM EPS-TIG event in Montenegro Invitation - Gordana Medin (Montenegro)  
1:25 PM LGAD Development at Teledyne e2v for the LHC’s High-Luminosity (HL) Upgrade - Martin Gazi (University of Oxford)  
1:45 PM Development of large-area LGADs for Space Application - Ashish Bisht1 (FBK)  
2:05 PM iLGAD Sensor For X-Ray Applications - Albert Doblas Moreno  
2:25 PM Principle of operation of an innovative new sensor for neutron detection based on resistive AC coupled LGAD - Luca Menzio (Universita e INFN Torino (IT))  
2:45 PM Preliminary Test Results of LGADs from Teledyne e2v for the LHC’s High-Luminosity Upgrade - Jonathan Mulvey (University of Birmingham)  
3:05 PM --- Coffee Break ---
3:25 PM Test beam measurements of BNL and HPK AC-LGADs - Christopher Madrid (Fermi National Accelerator Lab. (US))  
3:45 PM AC-LGAD novel geometries exploration by etching of metal on the surface AC-coupled pads - Dr Simone Michele Mazza (University of California,Santa Cruz (US))  
4:05 PM A new testing system for multipad RSD sensors based on a a new FAST ASIC - Filippo Miserocchi (UniTo - INFN)  
4:25 PM Latest Results on charge sharing in AC-LGAD (aka RSD) - Hartmut Sadrozinski (University of California,Santa Cruz (US))  
4:45 PM --- Coffee Break ---
5:05 PM Discussion on LGAD - Salvador Hidalgo (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC)) Nicolo Cartiglia (INFN Torino (IT)) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Gregor Kramberger (Jozef Stefan Institute (SI)) Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))  
9:00 AM
3D sensors (until 10:20 AM)
9:00 AM Response of 3D pixel sensors to grazing angle incident particles - Dr Jordi Duarte Campderros (Universidad de Cantabria and CSIC (ES))  
9:20 AM Time resolution of an irradiated 3D silicon pixel detector - Dario De Simone (Universitaet Zuerich (CH))  
9:40 AM 3D n-on-n detectors - OSCAR DAVID FERRER (Institute of Microelectronics of Barcelona)  
10:00 AM --- Coffee Break ---
10:20 AM
TPA-TCT (until 1:30 PM)
10:20 AM A table-top Two Photon Absorption – TCT system: Method and Setup - Moritz Oliver Wiehe (Albert Ludwigs Universitaet Freiburg (DE))  
10:40 AM A table-top Two Photon Absorption – TCT system: experimental results - Sebastian Pape (Technische Universitaet Dortmund (DE))  
11:00 AM New TPA-TCT system at JSI - Bojan Hiti (Jozef Stefan Institute (SI))  
11:20 AM Observation of an inactive region in irradiated silicon diodes - Oscar Murzewitz (Universität Hamburg (UHH))  
11:40 AM New results of edge-on measurements with electron beam on pad diodes - Mohammadtaghi Hajheidari (Hamburg University (DE))  
12:00 PM Discussion: TCT techniques and 3D sensors - Michael Moll (CERN) Marcos Fernandez Garcia (Universidad de Cantabria and CSIC (ES)) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Gregor Kramberger (Jozef Stefan Institute (SI))  
12:30 PM --- Lunch Break ---
PM
1:55 PM
SiC, Detector Characterization and Very High Fluence Experiments - Eckhart Fretwurst (Hamburg University (DE)) (until 5:00 PM)
1:55 PM Time resolution of 4H-SiC PIN and simulation of 4H-SiC LGAD - Dr Tao Yang (Chinese Academy of Sciences (CN))  
2:15 PM Timing resolution simulation of 2D and 3D SiC devices - TAN Yuhang Yuhang Tan (Chinese Academy of Sciences (CN))  
2:35 PM A new vision of I-V characteristics in irradiated Si sensors with heavily damaged regions - Dr Elena Verbitskaya (Iofffe Institute)  
2:55 PM First results from thin silicon sensors irradiated to extreme fluence - Valentina Sola (Universita e INFN Torino (IT))  
3:15 PM --- Coffee Break ---
3:30 PM Performance of Stitched Passive CMOS Strip Sensors - Marta Baselga (Deutsches Elektronen-Synchrotron (DE))  
3:50 PM Full-size passive CMOS sensors for radiation tolerant hybrid pixel detectors - Yannick Manuel Dieter (University of Bonn (DE))  
4:10 PM Comparison studies of heavily irradiated dielectrics for AC-coupled pixel detectors on MCz silicon - Shudhashil Bharthuar (Helsinki Institute of Physics (FI))  
4:30 PM Discussion on High Fluences and Detector Characterization - Gianluigi Casse (University of Liverpool (GB))  
6:00 PM
Collaboration Board - Gregor Kramberger (Jozef Stefan Institute (SI)) (until 8:00 PM)
1:30 PM
LGAD Mortality Studies (until 3:00 PM)
1:30 PM The mortality study on irradiated W36 LGADs and PINs for tuning the HV safety parameters and establishing the turning point for the irreversible breakdown (Part I): Using TCT-SPA with 800 nm of fs-laser at ELI - Gordana Lastovicka Medin (University of Montenegro (ME))  
1:50 PM The mortality study on irradiated W36 LGADs and PINs for tuning the HV safety parameters and establishing the turning point for the irreversible breakdown (Part II): Using TCT-TPA with 1550 nm of fs-laser at ELI - Gordana Lastovicka Medin (University of Montenegro (ME))  
2:10 PM Systematic study of heavily irradiated LGAD stability using the Fermilab Test Beam Facility - Ryan Heller (Fermi National Accelerator Lab. (US))  
2:30 PM Discussion: LGAD mortality - Nicolo Cartiglia (INFN Torino (IT)) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Gregor Kramberger (Jozef Stefan Institute (SI))  
3:00 PM
Monolithic Sensors - Eva Vilella Figueras (University of Liverpool (GB)) (until 6:35 PM)
3:00 PM --- Coffee Break ---
3:20 PM DAQ-ROC4Sens Update - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))  
3:40 PM Radiation hardness and development of a large electrode DMAPS design in a 150 nm CMOS process - Ivan Dario Caicedo Sierra (University of Bonn (DE))  
4:00 PM Characterization of depleted monolithic active pixel sensors in 180 nm TowerJazz technology - Christian Bespin (University of Bonn (DE))  
4:20 PM Status of the design of RD50-MPW3 ASIC - Raimon Casanova Mohr (IFAE - Barcelona (ES))  
4:40 PM --- Coffee Break ---
5:00 PM MPW2 testing in the RBI microbeam - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))  
5:20 PM The RD50-MPW2 High Voltage-CMOS sensor chip DAQ and preliminary testbeam results - Samuel Powell (University of Liverpool (GB))  
5:40 PM Readout system and testbeam results of the RD50 MPW2 HV-CMOS pixel chip - Patrick Sieberer (Austrian Academy of Sciences (AT))  
6:05 PM Discussion on Monolithic and Pixel sensors - Eva Vilella Figueras (University of Liverpool (GB))