The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon...
The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon...
A new TPA-TCT system based on FYLA fs laser has been assembled at JSI. The setup and first measurements will be presented in this talk.
The Transient Current Technique (TCT) is used to investigate the
response of silicon diodes. Electron-hole pairs are generated close to
the surface by illuminating the diode with two sources: either a pulsed
red-light laser or $\alpha$-particles. These charge carriers drift in the electric
field and induce transient currents on the diodes electrodes. The charge
collection of a diode is...
The previously introduced technique of edge-on measurement using an electron beam for pad diodes has been studied further. The method has been
improved in several aspects: the spatial resolution (by a factor of 2), the precision of the in-situ alignment (by a factor of 2.5), and the statistical errors (by
a factor of 2.0).
In this study, the pad diodes have areas of 25 mm2 and 12.5 mm2
, a...
