Hamburg University (DE)
Author in the following contributions
- New results of edge-on measurements with electron beam on pad diodes
- Observation of an inactive region in irradiated silicon diodes
- Defects formed in boron-doped Si diodes after high energy electron irradiation
- The boron-oxygen (BiOi) defect complex induced by irradiation with 6 MeV electrons in p-type silicon diodes
- Current Deep Level Transient Spectroscopy (I-DLTS) technique applied to p-type silicon diodes for Acceptor Removal studies
