Speaker
Albert Doblas Moreno
Description
In this work, we have optimized an Inverted Low Gain Avalanche Detector (iLGAD) for X-Ray irradiations. The first iLGAD generation was fabricated at IMB-CNM as a tracking sensor for high-energy physics (HEP) experiments. Based on this device, we have designed a new periphery using TCAD simulations, which can cope with up to a dose of 10 Mrad. The breakdown voltage of the sensor has been increased by four times in a harsh radiation environment. The second generation of iLGADs has been fabricated at IMB-CNM. We present in this contribution the electrical characterization of the sensors, as well as gain measurements. Moreover, the detectors have been irradiated at 10 Mrad, showing promising results.
Authors
Albert Doblas Moreno
Angel Merlos Domingo
(Instituto de Microelectronica de Barcelona IMB-CNM(CSIC))
Dr
David Flores Gual
(Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC))
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
Neil Moffat
(Consejo Superior de Investigaciones Cientificas (CSIC) (ES))
Salvador Hidalgo
(Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
Villegas Jairo
(Instituto de Microelectrónica de Barcelona IMB-CNM)
