Jozef Stefan Institute (SI)
Author in the following contributions
- Time resolution of an irradiated 3D silicon pixel detector
- New TPA-TCT system at JSI
- The mortality study on irradiated W36 LGADs and PINs for tuning the HV safety parameters and establishing the turning point for the irreversible breakdown (Part II): Using TCT-TPA with 1550 nm of fs-laser at ELI
- The mortality study on irradiated W36 LGADs and PINs for tuning the HV safety parameters and establishing the turning point for the irreversible breakdown (Part I): Using TCT-SPA with 800 nm of fs-laser at ELI
- A comprehensive feasibility study on the utilisation of the Ion Beam Induced Charge (IBIC) Nuclear Microprobe Technique at the RBI for the LGAD's Characterization including the Interpad-Gap Measurements
- Timing measurements on neutron-irradiated LGADs in epitaxial wafers
- The performance of IHEP-NDL and IHEP-IME LGAD sensors after neutron Irradiation
- Studies of effective inter-pad distance of different HPK and FBK LGADs
- Bistability of the BiOi complex – a reason for the observed large scattering in the determined acceptor removal rates in irradiated p-type silicon
