Conveners
Defect and Material Characterization - Acceptor removal studies: Defect and Material Characterization - Acceptor removal studies
- Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
Two current-based microscopic analysis methods - TSC and I-DLTS - with current injection and/or optical filling (in development) were recently and effectively used by CERN RD50 Acceptor Removal project group as reciprocal tools in the investigation of highly irradiated p-type silicon sensors and their related radiation hardness study aiming to understand and parametrise the existing acceptor...
Abstract: The radiation induced BiOi defect complex by 6 MeV electrons in low resistivity (10 Wcm) p-type epitaxial silicon diodes has been studied using the Thermally Stimulated Current (TSC) and the Thermally Stimulated Capacitance (TS-Cap) technique. The fluence values were in the range between 1 × 1015 e/cm2 and 6 × 1015 e/cm2. The extracted results on the activation energy, defect...
Our study focused on the BiOi defect, as determined from DLTS and TSC experiments, in connection with the acceptor removal rates in B-doped silicon PAD and LGAD diodes irradiated with 23 GeV protons and 1 MeV neutrons. We followed the dependencies on doping, irradiation fluence and particle type in a try of understanding the large scattering in the results reported previously for acceptor...
Three-dimensional Poole-Frenkel emission from BiOi was studied using three different approximations of the electric field inside the active p-type region. All three approaches for obtaining the TSC spectrum rely on the same assumption that every emitted charge is captured by the electrode without the possibility for recombination or re-trapping. With this common approximation the electric...
To investigate the acceptor removal by irradiation, high resistivity FZ silicon samples are implanted by boron, gallium and indium. A co-implantation with oxygen, carbon, nitrogen and fluor is done as well. After Implantation the samples are annealed in an RTP furnace. The sheet resistance and low temperature photoluminescence (LTPL) spectra are measured. Then the samples are irradiated by...
The boom of silicon in semiconductor technologies was closely tied to the ability to control its density of lattice defects. After being regarded as detrimental to the crystal quality in the first half of the 20th century, point defects have become an essential tool to tune the electrical properties of this semiconductor, leading to the development of a flourishing silicon industry. At the...
This project focuses on the investigation of radiation damage of epitaxial p-type silicon.
Various test structures consisting of Schottky diodes and pn-junctions of different size and flavors have been fabricated at different facilities, including RAL and Carleton University. The structures are fabricated on a 6-inch wafer of various doping (1e13, 1e14, 1e15, 1e16, and 1e17 B cm-3) and 50...
High Resolution Transmission Electron Microscopy (HRTEM) is a milestone in the imaging of structural defects. A LGAD sample irradiates at a fluence of 1e19 1MeV neutrons/cm2 has been investigated with a JEOL 2100 system, equipped with high resolution polar piece. Structural changes subsequent to a 30 min isochronous thermal treatment @150C, 200C, 250C, 200C and 350C respectively have been...
