Conveners
SiC, Detector Characterization and Very High Fluence Experiments: Detector Characterization and Very High Fluence Experiments
- Eckhart Fretwurst (Hamburg University (DE))
To explore the timing performance of the wide bandgap semiconductor devices, we measured the time resolution of 100 um 4H-SiC PIN device manufactured in China using the beta source and LGAD as reference. A simulation has been carried out to investigate the timing performance. We also reported the prospects of 4H-SiC with gain layer structure (LGAD) using the TCAD simulation.
SiC devices can work at high irradiation fluence and temperature environment, and 3D-SiC devices can achieve good time resolution and high charge collection, which makes it have broad application prospects. This report contains the time resolution simulation of 2D SiC devices and the comparison between measurement data and 2D simulation. The understanding of time resolution simulation of SiC...
The study is focused on the impact of heavily damaged Bragg peak region (BPR), which arises in Si p+-n-n+ diodes at the end of 15 um track of 53.4 MeV 40Ar ions on the degradation of the bulk current The method of the study included simulation of ion collisions with the silicon atoms, the measurements of I-V and C-V characteristics of irradiated diodes and their treatment using a specially...
The first 25 and 35 m$\mu$ thick LGAD sensors produced at FBK have been irradiated with neutrons up to 1$\cdot$10$^{17}$ n$_{eq}$/cm$^2$.
The preliminary electrical characterisation of the irradiated sensors will be presented.
The plans towards the next production of thin sensors optimised for extreme fluences will be discussed.
The vast majority of foreseen upgrades to existing particle physics detectors, as well as future Linear Collider experiments will continue to be based on silicon sensors as main tracking device. This means sensors will become even more of a cost driver than they already are today. In addition, sensors in the Float-Zone technology currently used in the LHC experiments are available from only a...
CMOS process lines are an attractive option for the fabrication of hybrid pixel sensors for large-scale detectors like the ATLAS and CMS detectors. Besides the cost-effectiveness and high throughput of commercial CMOS lines, multiple features like poly-silicon layers, metal-insulator-metal capacitors and several metal layers are available to enhance the sensor design.
After an extensive R&D...
The motivation of this study is the development of next generation capacitively coupled (AC-coupled) pixel sensors with coupling insulators having good dielectric strength and radiation hardness simultaneously. The AC-coupling insulator thin films were aluminum oxide (Al$_2$O$_3$) and hafnium oxide (HfO$_2$) grown by Atomic Layer Deposition (ALD) method. The Al$_2$O$_3$ thin films were...
