Conveners
Monolithic Sensors: Pixel Sensors and Monolithic devices
- Eva Vilella Figueras (University of Liverpool (GB))
The purpose of the proposed acquisition system is to provide a all-in-one solution that be able to capture and process the data generated for up to 4 Roc4Sens readout chips simultaneously. In order to achieve this goal, the system is composed of a FPGA Zynq Ultrascale+, a custom PCB and a management software. Thus, the operator will be able to manage the entire acquisition system from the GUI...
Monolithic CMOS active pixel sensors in depleted substrates (DMAPS) are an attractive development for pixel tracker systems in high-rate collider experiments. The radiation tolerance of these devices is enhanced through technology add-ons and careful design, which allow them to be biased with large voltages and collect charge through drift in highly resistive silicon bulks. In addition, the...
The high-luminosity upgrade of the LHC (HL-LHC) leads to new requirements on the detectors. With the availability of highly resistive silicon from commercial CMOS vendors, there are ongoing efforts to build depleted monolithic active pixel sensors (DMAPS) for high energy particle detectors. TJ-Monopix is a family of such a pixel sensor in 180 nm TowerJazz technology implementing a small...
RD50-MPW3 is a new prototype HV-CMOS ASIC, developed by the CERN-RD50 CMOS Working Group, whose submission for fabrication is planned for Q4 2021. It is the most advanced prototype of the RD50-MPWx series. RD50-MPW1 includes a fully monolithic matrix of 40 x 78 pixels, with a very small 50 µm x 50 µm pixel area that integrates both analog and FE-I3 style digital readout electronics inside the...
We would present a very recent experiment about the working of the MPW2 monolithic detector chip prototype under proton and ion microbeams at the RBI Pelletron facility. We plan to test the integrity of the memory cells using a proton beam for aiming to the target by looking the Particle X ray emission (PIXE) and then shooting ions in mili broadbeam (around 1 mm2), and microbeam (around 1 um2)...
The CERN-RD50 collaboration aims to develop and study High Voltage-CMOS (HV-CMOS) sensors for use in very high luminosity colliders. Measurements will be presented for the RD50-MPW2 chip, a prototype HV-CMOS pixel detector with an active matrix of 8 x 8 pixels. The active matrix is tested with injection pulses, a radioactive source and a proton beam. The talk will cover the FPGA based DAQ...
The RD50-CMOS group aims to design and study High Voltage CMOS (HV-CMOS) chips for use in a high radiation environment. Currently, measurements are performed on RD50-MPW2 chip, the second prototype developed by this group.
The active matrix of the prototype consists of 8x8 pixels with analog frontend. Details of the analog frontend and simulations have been already published earlier....
