The MALTA monolithic active pixel sensor is a full-scale particle detector in the Tower Semiconductor 180 nm architecture, with a small collection electrode design. It features a novel asynchronous readout based on a custom designed oversampling of a 37-bit wide bus and low front end power consumption (<80 mW/cm^2). Coupled with radiation hardness up to 1x10^15 neq x cm^2 (NIEL) and 80 Mrad...
Monolithic active pixel sensors with depleted substrates are a promising option for pixel tracker detectors in high radiation environments. Exploiting high resistivity silicon substrate and high bias voltages in commercial CMOS technologies allows to enhance the radiation tolerance to levels of high radiation environments. As part of the DMAPS development, two full-size prototypes with the...
The success of the Belle II experiment at KEK (Japan) relies on the very high instantaneous luminosity, close to 6x10^35 cm^-2 s^-1, expected from the SuperKEKB collider. The beam conditions to reach such luminosity levels generate a large rate of background particles in the inner detection layers of Belle II, which exceeds by far the rate of particles stemming from elementary collisions. This...
Future particle physics experiments are motivated by the increase in luminosity and thus the need for intelligent tracking detectors providing fast track and momentum information to select events of interest. The next generation tracking detectors are mostly all silicon detectors and thus finding a cost effective solution to maximise the output is important. Commercial CMOS technology for...
The CERN-RD50 collaboration has been developing High Voltage CMOS detector prototypes for high radiation environment based on high resistivity substrate and large collection electrode. In this contribution we will present timing properties of the RD50-MPW2 chip manufactured in LFoundry 150 nm process, which features an active 8 x 8 matrix of pixels with an analog front end and discriminator...
High Voltage-CMOS (HV-CMOS) sensors are an attractive option for tracking applications due to their high-performance and cost-efectiveness. However, to meet the challenging specifications required by future physics experiments in terms of radiation tolerance, time resolution and granularity, further R&D is needed to boost the performance of these sensors. UKRI-MPW0 is a new HV-CMOS sensor...
The second production of resistive silicon detectors at FBK, RSD2, features several innovative designs of the electrode geometry aiming to maximize signal sharing among a well-defined number of pads. This talk presents the first results obtained with the "cross" geometry, where the metal of the pads is shaped like a cross.
This geometry is particularly well suited to maximize charge sharing...
In this contribution, we present a new development of radiation-resistant silicon sensors. This innovative sensor design exploits the recently observed saturation of radiation damage effects on silicon, together with the usage of thin substrates, intrinsically less affected by radiation. The internal multiplication of the charge carriers will be used to overcome the small signals coming from...
Single photon detection of X-rays in the energy range of 250 eV to 1 keV for hybrid detectors is difficult due to the low quantum efficiency (QE) and to the low signal-to-noise ratio (SNR). The low QE is caused by the absorption of soft X-rays in the insensitive layers of the silicon sensor (entrance window). The entrance window is typically from a few hundred nanometers to a couple of...
Low Gain Avalanche Diodes (LGADs) are state-of-the-art silicon sensors for 4D tracking in high energy physics applications. A limitation of LGAD technology is the no-gain area (50-100µm) between adjacent pixels, which reduces the fill-factor (active area/total area) of the sensor. FBK proposed a novel strategy of LGAD-segmentation based on narrow trenches, that could potentially reduce the...
Using high resolution Secondary Ion Mass Spectroscopy (SIMS), the gain layer doping profiles of carbonated FBK UFSD 2 and CNM RUN 10478 LGADs are evaluated. A combination of $^{55}$Cs$^{-}$ and $^{16}$O$^{+}$ primary ion driven campaigns yield a high sensitivity in the order of 1.35 $×$ 10$^{14}$ $atoms/cm^{3}$ for Boron concentrations along with a precise depth estimation within ~ 5 $nm$. For...
In this contribution, I present the latest production of Ultra-Fast Silicon Detectors, UFSD4, manufactured by Fondazione Bruno Kessler. The production comprises of 18 wafers; on each wafer there are R&D structures and 12 full sensors prototypes for the Endcap Timing Layer of the CMS experiment at the High Luminosity LHC. Each of this 12 sensors has 16x16 1.3x1.3 mm^2 pads. The new batch...
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification. LGADs can provide time resolution as good as 17 pico-seconds for minimum ionizing particles. In addition, the fast rise time and short full charge collection time (as low as 1 ns) of LGADs are suitable for high repetition rate measurements in photon science and other fields. However the...
Low Gain Avalanche Diode (LGAD) detectors are entering the mainstream as sensors planned for use in future particle detectors. However, their granularity is limited due to the need to isolate separate segments (strips or pixels) of the detector through the gain layer, limiting the granularity scale to approximately 1 mm. However, AC-coupled LGADs (AC-LGADs), also known as resistive silicon...
LGAD's failure due to Single Burnout Event and charge collection insufficiency (gain suppression) received a lot of attention recently,
Those radiation and high injection effects have some features in common, both deals with high density of generated charge but what distinguishes them seems to be the main triggering mechanism for another. While SEB induces a localized high-current state,...
Low Gain Avalanche Diodes (LGADs) is one of the most promising sensing technologies for future 4D-tracking applications and has recently been qualified to be used in the ATLAS and CMS timing detectors for the HL-LHC upgrade. LGADs achieve an excellent timing performance due to the presence of an internal gain that improves the signal-to-noise ratio.
These detectors are designed to exhibit a...
The “Perugia 2019 Surface” radiation damage model is a Synopsys Sentaurus Technology CAD (TCAD) numerical model which accounts for surface damage effects induced by radiation on silicon particle detectors. In order to get a complete picture of the phenomena taking place in the volume of the irradiated silicon detectors, the non-ionizing effects, referred to as bulk damage, also need to be...
Low Gain Avalanche Detectors (LGADs) are a novel silicon sensor technology being developed to design full 4D trackers able to measure precisely both spatial and temporal coordinates. The first deployment of this technology will be in the ATLAS and CMS timing layers at the High Luminosity LHC where, by adding fast timing information to each crossing track, they will allow to better separate...
Low Gain Avalanche Diodes (LGADs) will be employed in the CMS MTD and ATLAS HGTD upgrades to mitigate the high levels of pileup expected in the High Luminosity phase of the LHC. Over the last several years, much attention has focused on the development of radiation tolerant gain implants that successfully provide gain even after the fluences expected at the HL-LHC, in excess of 1 x 10^15...
Silicon sensors for the future generation of collider physics experiments will require high performances on spatial ($< 10$ $\mu m$) and time resolution $(20-50 $ $ps$ ) with a radiation tolerance up to fluences of $10^{17}$ $n_{eq}/cm^{2}$. To meet these challenges, an innovative silicon sensor architecture is proposed, achieving internal gain without relying on doping, the Silicon Electron...
Recently, an increasing interest towards the development of novel Monolithic Active Pixel Sensors (MAPS) based on CMOS technology has spread inside the radiation detector community. The ARCADIA project aims at the development of an innovative platform for the design of MAPS exploiting a production process which is fully compatible with commercial 110nm CMOS technology. A first engineering run,...
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key...
The new Inner Tracker CMS pixel detector for the High-Lumi upgrade of LHC will be designed to sustain and collect till to 1 MeV neutron equivalent fluence ($\phi_{eq}$) of up to 2.3 x 10$^{16}$ cm$^{-2}$ for more than 3000 fb$^{-1}$ of integrated luminosity. Various solutions are being evaluated in terms of pixel pitch, sensor designs, and vendors.
Planar n${^+}$-p sensors produced by...
After the current running period Run 3 the LHC will undergo a major upgrade with the instantaneous luminosity reaching at $7.5 \times 10^{34}$ $cm^{-2}$ $s^{-1}$. In order to maintain or improve the physics performance of the CMS detector in this challenging conditions of the HL-LHC, the entire tracking system must be replaced with new detectors with higher radiation tolerance and improved...
The main goal of the presentation is to show the dependence of the leakage current and full depletion voltage on TID. Whereas the measured I-V characteristics show a linear dependence on TID, the full depletion voltage and thus also the effective doping concentration significantly decreases with higher gamma irradiation. The gradual decrease of the effective doping concentration with higher...
Collider experiments as the upcoming high-luminosity LHC or the future FCC will increase the demands of the detectors used for tracking. In the FCC, sensors will not only face fluences of up to $1\cdot10^{17}~n_\mathrm{eq}/\mathrm{cm}^2$ , but also high pile-up scenarios. Thus sensors are needed which have a high radiation tolerance, but also an excellent time resolution while still providing...
The proven potential of 3D geometries at higher than $10^{16}$ $n_{eq}/cm^{2}$ radiation fluences, in combination with a small cell approach, makes them an excellent choice for a combined precision timing tracker. In this study, the timing resolution of a single 50 x 50 $\mu m$ 3D pixel cell is presented in various temperatures through charge collection measurements with discrete electronics...
Columnar pixel sensors, also known as 3D sensors, are considered for the innermost layers of the tracking detectors of the CERN Large Hadron Collider High Luminosity upgrade (HL-LHC). In the case of the CMS experiment, the first layer of pixel detectors will be installed at about 3cm distance from the beam pipe; it will be exposed to unprecedented fluences of up to 2E16 neq/cm2 (1MeV...
SINTEF MiNaLab recently completed its sixth fabrication run of 3D pixel detectors as pre-production for the ATLAS ITk upgrade. The common sensor layout for RD53B sensors in 50x50 (1E) configuration was used. In addition, sensors compatible with RD53A readout as well as 3D diodes and 3D strips were included in the wafer layout. In this iteration of the technology, the active-edge was removed...
For the high luminosity upgrade of the LHC, the CMS experiment is considering implementing the innermost layers of its inner tracker with 3D pixels. This technology should allow the detector to operate safely at unprecedented fluences that can be as high as O(2e16 Neq/cm2). In this study we present results of pixelated 3D sensors fabricated at IMB-CNM and interconnected to the RD53A...
Monolithic silicon pixel detectors are attractive candidates for future large-area trackers in particle physics due to their advantages, for instance to reduce the production effort and material budget. State of the art monolithic silicon pixel detectors can reach high spatial precision. Integrating picosecond time resolution in such devices would significantly improve their performance and...
A single arm beam telescope based on the Timepix4 ASIC was built in order to
perform first tests of synchronous readout and track reconstruction.
The telescope is composed of four planes with n-on-p silicon sensors.
Two of these planes are instrumented with 300 $\mu m$ thick sensors tilted with respect to the beam, to provide high quality spatial measurements, while the remaining two...
Recent advantages in crystal growth have facilitated the production of high resistivity (HR) chromium compensated gallium arsenide (GaAs:Cr), which has become an alternative to silicon especially in X- and gammas-ray detection and imaging, where such sensors profit from their higher absorption efficiency. To explore charge transport properties of the material we measured the dependence of the...
Within the RD50 Collaboration, a large R&D program has been underway for more than a decade across experimental boundaries to develop silicon sensors with sufficient radiation tolerance for LHC-Phase-II trackers. While these trackers are now entering their construction phase, RD50 is continuing to study silicon sensors for particle tracking, but shifting the focus to applications beyond the...
Silicon Carbide is one of the most promising materials for radiation detectors due to the high resistance to radiation damage. In this work we present the study of the radiation damage of a new large, p-n junctions silicon carbide device developed by SiCILIA collaboration. Several devices under test were irradiated in different experimental conditions with different beams in order to study its...
Recent developments in semiconductor pixel detectors allow for a new generation of positron-emission tomography (PET) scanners that, in combination with advanced image reconstruction algorithms, will allow for a few hundred microns spatial resolutions. Such novel scanners will pioneer ultra-high-resolution molecular imaging, a field that is expected to have an enormous impact in several...
As the module production for the ATLAS ITk Pixel detector approaches, prototype modules are scrutinised with test-beam particles to measure their properties. First results are presented of the reconstruction and analysis of these test-beam data for modules built with four front-end chips attached to a single sensor, called quad modules. The challenges of analysing data from quad modules are...
Penetrating particle Analyzer (PAN) is an instrument designed to be used in deep space and interplanetary missions. It can precisely measure and monitor the flux, composition, and direction of highly penetrating particles in the effective range between 100 MeV/nucleon and 10 GeV/nucleon. It is a versatile device, which can potentially have an application in cosmic ray physics, solar physics,...
Here goes the content. Silicon tracking detectors for the FCC-hh require unprecedented radadiation hardness up to $10^{15}$N$_{eq}$. We develop them with the help of TCAD simulations in 3D and CMOS technologies.
