Speaker
Matthew Donnelly
Description
In this work we show the results of an atomistic tight-binding approach coupled with the Non-Equilibrium Green’s Function (NEGF) formalism when applied to phosphorus doped silicon tunnel junctions that can be manufactured with sub-nanometre accuracy.
Primary authors
Matthew Donnelly
Mushita Masud Munia
(University of New South Wales)
Dr
Joris Keizer
Dr
Yousun Chung
Mr
A.M. Saffat-Ee Huq
Ms
Yuling Hsueh
Rajib Rahman
(The University of New South Wales)
Michelle Simmons
(The University of New South Wales)
