Conveners
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 1 - Hybrid Semiconductors and Processing
- Mariusz Martyniuk
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 2 - Quantum Well Devices and Lasers
- Antoni Rogalski (Military University of Technology)
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 3 - New Materials Growths and Device Fabrications
- Deb Kane
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 4 - Integration and Enabling Technologies
- Andreas Boes (RMIT University, University of Adelaide)
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 5 - Nanoscale Photonics and Devices
- Nelson Tansu
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 6 - Wide Bandgap Semiconductors
- Aleksandar Rakić (The University of Queensland)
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 7 - Novel Devices and Materials
- Dominic Lane (The University of Adelaide)
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 8 - 2D Materials and Novel Optical Properties
- Glenn Solomon (University of Adelaide)
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 9 - Novel Photonics Materials and Lasers Systems
- Lan Fu (The Australian National University)
Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD 10 - Novel Electronic Devices
- Lorenzo Faraone (The University of Western Australia)
Metal halide semiconductors have emerged as attractive materials for solar cells. In this talk I will discuss some of our recent work exploring the optoelectronic properties of lead-iodide perovskites and silver-bismuth halide semiconductors.
Tuning the charge transfer and optoelectronic properties of 2D materials such as black phosphorus (BP) by hybridising it with an organic semiconducting polymer.
β-Ga2O3 gratings were fabricated by inductively-coupled-plasma (ICP) etching process to have a clearer understanding of dry etching mechanism during semiconductor device manufacturing process. Different parameters were adjusted to investigate their effects and find the best etching recipe.
We report high-quality MBE growth and a mechanical property study of HgCdSe layers on GaSb (211) substrates. Both the crystal quality and the mechanical properties of HgCdSe have been demonstrated to be comparable to those of HgCdTe
Here we report the optimization of the growth of superconducting boron doped diamond on insulating diamond substrates via microwave plasma chemical vapor deposition (MPCVD) using a 3D-printed titanium Faraday cage, which leads to superior uniformity in growth and boron incorporation.
The growth of QCLs requires an understanding of the interfacial properties of the superlattice (SL) active region. Atomic probe tomography is used to elucidate the interfacial properties within the QCL, and incorporate these observed properties into advanced QCL designs.
In this work a 3D CdTe layer was grown on 2D Sb2Te3 nanosheets through molecular beam epitaxy, subsequently the heterostructure at the interface was studied by TEM, suggesting high quality epitaxial growth materials promising for applications in future optoelectronic devices.
Terahertz sensing holds promise for applications in precision agriculture due to the sensitivity of terahertz waves to hydration.
Here we present a laser-based terahertz imaging technique to evaluate temporal change of hydration in leaves.
We generate and verify entanglement in sizeable multiqubit states prepared on IBM Quantum superconducting devices. We report the detection of whole-device bipartite entanglement on a 65-qubit quantum device and genuine multipartite entanglement over all qubits of a 27-qubit quantum device.
We present the machine learning design of nanoscale-engineered InGaN-based QW with ten sublayers for enhanced performance based on a heuristic algorithm. Such a design approach can achieve significant improvements in the material gain characteristics and current density of QW.
We present single-molecule level sensing of biomarkers by a solid-state nanopore sensor, a next-generation nanoelectronic sensor, as a diagnostic tool at ultra-low concentrations and volumes. We are now exploring protocols to operate in complex samples like blood and saliva.
We present high performance HgCdTe infrared photodetectors for sensing applications in the mid-wave spectral band of 3~5 μm based on the n-on-p technology.
We discuss fabrication challenges to realize plasmonic MEMS-enabled tunable LWIR filter consisting of a suspended perforated gold membrane with a vertically actuated thin silicon structure above it.
In this paper, we present the proof of concept of a fast silicon nitride photonic switch with MEMS actuation by using conventional lithography. Fabrication and optical characterisation of the device have been demonstrated successfully.
Engineering of randome lasing in nanoporous photonic crystals
Our recent advances in wafer-scale integration of Micro-Electro-Mechanical Systems in Silicon Photonics have shown high performance tuneable couplers, filters, switches, and phase shifters that provide an advanced technology basis for emerging applications requiring very large-scale photonic integration such as programmable photonics.
We investigate the charge dynamics following the optical excitation of a single erbium ion inside a silicon FinFET. We observe a latched charge signal that depends on gate voltage, optical intensity and optical pulse length.
Au-Ag nanostars, with enhanced plasmonic properties due to multiple “hot-spots” on the tips, stabilized in BSA@PBS buffer solution without formation of protein corona. The prepared nanostructures were stable in biological fluid and preserved their original enhanced optical activity.
In this work, HgCdTe infrared detectors are taken as an example to simulate and study the mechanical and optoelectronic properties of HgCdTe infrared material under curved conditions in order to understand the feasibility of fabricating curved HgCdTe image sensors.
Holmium-doped high power fiber lasers operate at an eye-safe wavelength and have numerous applications. In this talk, we discuss a new method of optical pumping for this technology - using GaSb-substrate-based high power laser diodes emitting at 1950 nm wavelength.
Applying a comprehensive 20-band $sp^3d^5s^*$ tight-binding model with self-consistent field Hartree method to calculate energies of multi-electron states, we investigate the $D^-$ charging energies of donor molecules in silicon consisting of two phosphorus impurities in various orientations.
We theoretically and experimentally demonstrate a quantum clock implemented with a superconducting qubit and show the thermodynamic limit of the clock accuracy in the quantum regime is caused by the entropy production rate.
We employ nanopatterning, via diblock co-polymer lithography, and selective area-MOVPE growth to achieve high-density InGaN/GaN quantum dots for UV applications
We demonstrate the controlled engineering of boron vacancy defects creation in two dimensional material hBN. The spin state in these defects can be controlled optically which is highly desirable for realization of quantum devices and scalable quantum communication technologies.
A novel fabrication methodology incorporating neon-ion milling is developed to engineer superconducting boron-doped diamond devices including the first diamond nano-SQUID, with noise properties (flux noise: 0.14 $\mu\phi_0$/$\text{$\sqrt{\text{Hz}}$}$ at 1 kHz, spin sensitivity: 11 spins/$\sqrt{\text{Hz}}$) comparable to optimal Nb-nano-SQUIDs reported.
III-Nitride material system has been utilized to obtain high-performance UV-A lasers. In this study, we focused on understanding the impact of waveguide thickness on the performance of 390 nm GaN laser diodes.
This work presents a precise technique to control fabrication of quantum emitters in hexagonal boron nitride (hBN) via electron irradiation. An annealing procedure for increased efficiency and link to well documented UV defect emission in hBN is also outlined.
In this work, we perform epitaxial growth and characterizations of AlGaInN alloys lattice-matched to GaN with four different compositions. The understanding of growth conditions and optical properties of AlGaInN alloys are essential for integration with GaN-based applications.
We present a multilayer epitaxial lift-off process for thin-film fabrication for photovoltaics, flexible optoelectronics and III-V metamaterials. The lift-off process provides significant cost benefits by lifting off multiple large-area films from a single epitaxial stack.
A fabrication process for unique AlSi alloy nanowires and corresponding magneto-resistance data presented.
Vanadium oxide, metal-insulator transition, negative differential resistance, threshold switching, neuromorphic computing.
We have developed modulators and detectors of terahertz (THz) frequency radiation by exploiting the unique properties of semiconductor nanowires. Our new cross-nanowire THz receiver is enabling the emerging field of THz polarimetry.
Atomically-thin materials possess unique intrinsic properties and are amenable to a range of tuning techniques. We harness these properties underpinned by application demand and work with industry to translate into end-user products.
We employ terahertz scattering-type scanning near-field optical microscopy to quantitatively investigate the materials and structures in the nano-scale. We explore inorganic materials, contemporary electron devices, and biological nano-structures.
For the first time, we integrate two-dimensional black phosphorus photoconductors onto waveguides fabricated on the emerging lithium niobate-on-insulator platform, and demonstrate efficient on-chip detection at telecommunication wavelengths.
Stable single photon quantum emitters in hexagonal Boron Nitride (hBN) can be deterministically created in the material and consistently emit at 436 nm wavelength. This work conducted Stark effect measurements on a number of blue emitters to investigate their nature.
Validating the use of hexagonal boron nitride (hBN) nanopowders as a simple, cost-effective solution for quantum sensing applications. Demonstrating sensing of paramagnetic ions using hBN nanopowder and further exploring its magnetic sensing capabilities by preparing thin films of controlled thickness.
Optimum semiconductor laser parameters for generating broad rf bandwidth chaotic output are informed by numerical simulation results of a SL with delayed optical feedback system. The simulation results are also connected with experiments.
UV emission from lanthanide-doped upconversion nanoparticles could promotes cell damage in super-resolution microscopy (details in the attached PDF file)
This work presents a study on the chemical vapor deposition-grown Sb2Se3 nanowires and their applications in polarized photodetection. The fabricated photodetector exhibits a good sensitivity to polarized light at 830nm. Conventional and polarimetric imaging are also achieved under white light.
We characterize superconducting Tungsten Silicide films for high kinetic inductance. The films are then used to fabricate superconducting microwave resonators with high internal quality factors, and resilience to in-plane magnetic fields with potential applications in scale-up quantum computing.
The purpose of this paper is to point out these unreliable photodetector parameters noted by the author and to try to draw attention to the obvious physical limitations of photodetectors that are sometimes overlooked in estimating photodetector performance.
We address the challenges of growing epitaxial graphene on the 3C-SiC/Si system with our findings finally opening the possibility of obtaining dynamic tunability of charge transport in graphene on SiC/Si for integrated nanoelectronics and nanophotonics functionalities.
The work demonstrates the synthesis of ultrathin two-dimensional(2D) indium nitride(InN) films with few atom thicknesses and lateral dimensions exceeding centimeter-scale. The as-synthesized films feature 2D electron gases rendering them promising candidates for next-generation advanced optoelectronic devices and functional 2D heterostructures.
Non-volatile 2D memory systems are being widely considered because of their scalability. We experimentally and theoretically investigate 2D InSe for resistive switching alongside investigating the role of cations and anions in the switching mechanism.
Au-hyperdoped Si has recently shown promise as a Si-based near-infrared detector. Here, we show electrical characterization measurements of Au-hyperdoped Si in an effort to optimize device architecture and detector efficiency.
