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The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier diodes (SBD) were studied using current-voltage (I–V) and capacitance-voltage (C–V) techniques. The acquired results showed that the Si-based diodes were well fabricated, and Fe-implantation changed the normal diode's I-V behaviour from typical exponential to ohmic. The ohmic behaviour was described in terms of the defect levels induced by Fe that were positioned in the middle of the energy gap of Si. The C-V results show that Fe generates high density of minority carriers in p-Si which agrees with the increase in reverse current observed in I-V results. Also, the diode parameters in terms of saturation current, ideality factor, Schottky barrier height, doping density, and space charge region (SCR) width were used to investigate the effect of Fe in p-Si-based diode. Owing to the changes observed, which are analogous to those induced by dopants found to improve the radiation-hardness of silicon, it is safe to say that Fe can also assist in the quest to improve the radiation-hardness of silicon using defect-engineering method.
