Speaker
Description
Current trackers and accelerators are populated with silicon detectors which give excellent resolution and time performance and they can withstand high radiation damage. The fabrication of large area silicon detectors such as strips are currently limited to microelectronics foundries since they fabricate a full large area detector (more than 10cm2) with a single mask set. To evaluate the applicability of using stitched sensors, in this project we fabricated 4.1 cm and 2.1 cm long passive strip detectors using a CMOS foundry (with 150 nm resolution). The sensors are 150 µm thick and have different geometries.
I will present an overview of the results for the passive CMOS strip detectors such as electrical characterisation, charge collection and test beam results before and after irradiation.
