Speaker
Description
In this contribution, we present the preliminary results from a new batch of radiation-resistant silicon sensors in production at the Fondazione Bruno Kessler (FBK, Italy). The design of the sensors exploits the recently observed saturation of radiation damage effects on silicon, together with the usage of thin substrates, intrinsically less affected by radiation. To cope with the small signal coming from thin sensors, the Low-Gain Avalanche Diode (LGAD) design is adopted to achieve internal multiplication of the charge carriers. Sensors with active thicknesses between 15 and 45 $\mu$m have been produced at FBK. Different solutions to preserve internal gain above 1E16/cm$^2$ and possibly up to 1E17/cm$^2$ have been adopted: innovative defect engineering of the LGAD gain implant, such as a carbon shield to protect the p$^+$ layer, and a p$^+$–n$^+$ compensation of the dopant atoms are included in the batch. Moreover, this production aims for extensive R&D on the peripheral structures optimised for thin substrates. The goal is to pave the way for a new sensor design that can efficiently perform precise tracking and timing measurements up to 1E17/cm$^2$. Preliminary results on the sensors' characterisation will be presented and discussed.
