Speaker
Alissa Shirley-Ann Howard
(Jozef Stefan Institute (SI))
Description
A set of unirradiated LGADs from the HPK prototype 2 run for HGTD were used to determine the impact ionization parameters for silicon, particularly in the electric field range of ∼30 V/μm which is of interest for LGADs. The parameters' dependence on temperature was determined. Their validity on irradiated sensors up to 2.5E15 cm$^{-2}$ was also tested.
Author
Alissa Shirley-Ann Howard
(Jozef Stefan Institute (SI))
Co-authors
Bojan Hiti
(Jozef Stefan Institute (SI))
Gregor Kramberger
(Jozef Stefan Institute (SI))
Igor Mandic
(Jozef Stefan Institute (SI))
Vladimir Cindro
(Jozef Stefan Institute (SI))
