Speaker
Tomas Ceponis
(Vilnius University)
Description
Carrier lifetime profiles, measured by diode (PIN and LGAD) edge scanning of microwave probed photoconductivity transients, are considered. The obtained carrier lifetime profiles are compared with the electrical (C V, I V) characteristics obtained on the same structures. It is shown that carrier lifetime variations correspond to the dopant density variations extracted using C-V characteristics within base region of the diodes. Additionally, the profiles of carrier recombination lifetime in structures irradiated by stopped protons are discussed.
Authors
Prof.
Eugenijus Gaubas
(Vilnius University)
Dr
Giulio Pellegrini
(The Institute of Microelectronics of Barcelona)
Dr
Jevgenij Pavlov
(Vilnius University)
Dr
Laimonas Deveikis
(Vilnius University)
Mr
Rytis Markevicius
(Vilnius University)
Tomas Ceponis
(Vilnius University)
Dr
Vytautas Rumbauskas
(Vilnius University)
