Speaker
Valentina Sola
(Universita e INFN Torino (IT))
Description
The recently observed saturation of the charge multiplication mechanism in LGAD devices has been studied and characterised with an infrared laser used to replicate the particle charge deposition ranging from 1 to 80 equivalent MIPs. The observations are compared to the response from beta particles and impinging protons with different energies. The influence of regions with high electric field values, above 10 V/$\mu$m, on the saturation of the gain mechanism, has been studied via 2D and 3D Technology CAD device simulation.
Authors
Valentina Sola
(Universita e INFN Torino (IT))
Mohammed Abujami
(Università e INFN Torino (IT))
Roberta Arcidiacono
(Universita e INFN Torino (IT))
Patrick Asenov
(Universita e INFN, Perugia (IT))
Maurizio Boscardin
(FBK Trento)
Nicolo Cartiglia
(INFN Torino (IT))
Matteo Centis Vignali
(FBK)
Marco Costa
(Universita e INFN Torino (IT))
Tommaso Croci
Marco Ferrero
(Universita e INFN Torino (IT))
Alessandro Fondacci
(University of Perugia - Electronic engineering student)
Giulia Gioachin
(University of Turin)
Simona Giordanengo
(INFN Torino)
Leonardo Lanteri
(Universita e INFN Torino (IT))
Felix Mas Milian
(Università e INFN Torino (IT))
Luca Menzio
(Universita e INFN Torino (IT))
Vincenzo Monaco
(Universita e INFN Torino (IT))
Diango M. Montalván Olivares
(Università e INFN Torino (IT))
Arianna Morozzi
(INFN, Perugia (IT))
Francesco Moscatelli
(IOM-CNR and INFN, Perugia (IT))
Roberto Mulargia
(University & INFN Turin (IT))
Daniele Passeri
(Universita e INFN Perugia (IT))
Giovanni Paternoster
(Fondazione Bruno KEssler)
Federico Siviero
(Universita e INFN Torino (IT))
Amedeo Staiano
(Universita e INFN Torino (IT))
Marta Tornago
(Universita e INFN Torino (IT))
