Speaker
Nicolo Cartiglia
(INFN Torino (IT))
Description
The implementation of resistive read-out in the design of silicon sensors places built-in charge sharing among neighboring pixels as the basic principle of operation. Resistive Silicon Detectors (RSD), exploiting the signals seen on the electrodes surrounding the impact point, achieve micron-level position resolution even with very large pixels. In this paper, results obtained with sensors from the second RSD production at the Fondazione Bruno Kessler are presented. A position resolution better than 3% of the pixel size is obtained for pitch ranging from 200 to 1300 μm.
Authors
Federico Siviero
(INFN - National Institute for Nuclear Physics)
Nicolo Cartiglia
(INFN Torino (IT))
Giulia Gioachin
(University of Turin)
Leonardo Lanteri
(Universita e INFN Torino (IT))
Luca Menzio
(Universita e INFN Torino (IT))
Marco Ferrero
(Universita e INFN Torino (IT))
Marco Mandurrino
(INFN)
Marta Tornago
(Universita e INFN Torino (IT))
Roberta Arcidiacono
(Universita e INFN Torino (IT))
Roberto Mulargia
(University & INFN Turin (IT))
Valentina Sola
(Universita e INFN Torino (IT))
