Speaker
Description
Compared to Silicon (Si), silicon carbide (SiC) has multiple advantageous material properties, making it an interesting candidate for high beam rate detectors. SiC features a higher charge carrier saturation velocity and breakdown voltage than Si, which allows for a high time resolution and aids in mitigating pile-ups. The large band gap of SiC improves its radiation hardness, which, together with its good thermal conductivity, limits the dark current even for very high beam rates and irradiation levels.
This talk presents measurements and simulations for a $50 \mu m$ thick 4H-SiC pad sensor. We show laboratory measurements using $\alpha$$/$$\beta$ sources, as well as multiple studies performed using high energy (up to 252.7 MeV) and high rate (several 100 MHz) proton beams. In order to investigate the effects of radiation-induced damage in SiC sensors, we present UV-TCT and proton beam measurements of neutron-irradiated samples with equivalent fluxes of up to $1\times 10^{16}$ $n/cm^2$ according to the NIEL hypothesis.
To guide future measurements and the construction of SiC low gain avalanche detectors (LGADs), we aim at using Monte Carlo simulations leveraging the AllPix$^2$ framework together with electric fields simulated by TCAD and COMSOL. We present our simulation workflow for AllPix$^2$ and show preliminary comparisons between measured and simulated data. Finally, current challenges specific to simulations of SiC (and SiC LGADs) are highlighted.
