Speaker
Dr
Algirdas Mekys1
(Vilnius University)
Description
1 Vilnius University (LT)
2 Byelorussian State University (BY)
Corresponding author : algirdas.mekys@ff.vu.lt
Abstract: The radiation induced defects in silicon changes charge carrier transport properties, which are investigated by Hall and magnetoresistivity measurement techniques. The study concentrates on p-type Si material showing recent interest in BiOi defect formation. The irradiation of 6MeV energy electron fluence covers range from 1E+16 to 5E+16 /cm2. The analysis enables to extract free carrier thermal activation energy, the density of impurities and relate them to the irradiation fluence. The results are supplemented with the ones from thermal annealing.
Primary authors
Dr
Algirdas Mekys1
(Vilnius University)
Prof.
Juozas1 Vaitkus
(Vilnius University)
Prof.
Leonid Makarenko2
(Byelorussian State University)
Dr
Šarūnas Vaitekonis1
(Vilnius University)
