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G-RADNEXT Workshop 2023

8–9 Nov 2023
CERN
Europe/Zurich timezone

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Contribution List

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  1. 49. Registration & Refreshment
    08/11/2023, 12:00
  2. 59. Institutional welcome from CERN
    Enrico Chesta (CERN)
    08/11/2023, 12:30
  3. 61. Industrial activities at RADNEXT and introduction to the workshop
    Ennio Tito Capria
    08/11/2023, 12:35
  4. 62. Institutional welcome from the RADECS association
    Francoise Bezerra
    08/11/2023, 12:45
  5. 60. Introduction to RADNEXT
    Ruben Garcia Alia (CERN)
    08/11/2023, 12:50
  6. 58. Keynote Talk 1: Radiation Effects on Electronics lessons learnt from Accelerators Facilities
    Ruben Garcia Alia (CERN)
    08/11/2023, 13:00
  7. 69. Session 1: Industry-relevant results gained from RADNEXT Transnational Access
    Salvatore Fiore (CERN)
    08/11/2023, 13:30
  8. 30. Session 1: Calibration of the deposited energy in CMOS imagers for particle detection on nanosatellites
    Josua Florczak
    08/11/2023, 13:35

    Commercial off-the-shelf (COTS) CMOS sensors are increasingly used in scientific applications on nanosatellites. Applying a software based approach and in addition to their image acquisitions tasks, these CMOS sensors can be used to detect ionizing particles to improve the fault tolerance of imaging instruments on nanosatellites without the need for additional hardware. A challenge in using...

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  9. 4. Session 1: High energy ion beam benchmarks for dosimetry and radiation effects
    Natalia Emriskova (CERN)
    08/11/2023, 13:55

    CERN is currently upgrading the PS East Area T8 beamline to enable flexible ion operation with the aim of extending the accessibility to high-energy ions (100-5000 MeV/n) in Europe for research and industry. This is done through the HEARTS EU project that aims at achieving similar capabilities also at the GSI SIS-18 accelerator, which benefits from several years of experience in accelerating...

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  10. 6. Session 1: Pulsed X-Rays for SEE pre-qualification of COTS
    Samuel Dubos
    08/11/2023, 14:15

    An alternative test method to heavy ions was evaluated for SEE testing of various devices: the pulsed X-rays from ID09 beamline at ESRF (Grenoble). This facility was previously evaluated in [1][2] and results showed very good agreement between facilities on a limited number of devices. The goal of this study, performed in collaboration with the CNES, is to identify alternative test facilities...

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  11. 5. Session 1: Characterizing Neutron Induced Errors on RISC-V Processors for Safety-critical Applications
    Fernando Fernandes dos Santos
    08/11/2023, 14:35

    Thanks to the RISC-V open-source Instruction Set Architecture, researchers and developers can propose new solutions efficiently, with low-cost and low-power consumption. RISC-V-based architectures can be customized for the efficient execution of Machine Learning (ML) algorithms and can be integrated into safety-critical and mission-critical domains that require a reliable operation. However,...

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  12. 8. Session 1: SEE testing of GaN power transistors with high energy hadrons
    Mario Sacristan Barbero (Univ. Montpellier - CERN)
    08/11/2023, 14:55

    Wide bandgap power transistors exhibit a number of advantages when compared to their silicon-based partners and radiation hardness is not an exception. In this talk, the author shows the results of irradiating the GaN devices under high energy protons and neutrons, representative of atmospheric and particle accelerator environments, in facilities which are part of the RADNEXT network. The...

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  13. 7. Session 1: Ground SEE testing of LEON5/NOEL-V demonstrator chip in European deep-submicron technology
    Ádria Barros de Oliveira
    08/11/2023, 15:15

    The LEON5FT and NOEL-VFT are state-of-the-art processors from Frontgrade Gaisler. Both processor cores feature built-in fault tolerance (FT) and are part of the GRLIB IP Library [1]. The LEON5FT is a 32-bit processor based on the SPARC V8 architecture, whereas the NOEL-VFT implements the RISC-V architecture.
    An Application Specific Integrated Circuit (ASIC) test chip, built on...

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  14. 70. Session 2: Young professionals from academia and industry
    Dr renaud mangeret
    08/11/2023, 16:25
  15. 10. Session 2: Development of a static and dynamic test bench for testing GaN HEMT power components in harsh environments
    Cyril Chabot (CEA), Marc Orsatelli (CEA)
    08/11/2023, 16:30

    Bio:

    Cyril Chabot received his M.S in Physical Engineering from the National Institute of Applied Science (INSA) in Toulouse, France, in 2021. He is currently a R&D Engineer at the French Alternative Energies and Atomic Energy Commission (CEA). He works on Wide Band Gap test and characterization topics and on the development of WBG devices (GaN, SiC) specific test methodologies and test...

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  16. 11. Session 2: Characterization technique for irradiated SiC power MOSFETs
    Corinna Martinella (ETH Zurich - APS Laboratory)
    08/11/2023, 16:48

    Bio:

    Corinna Martinella received the MSc degree in Nuclear Engineering at Politecnico di Milano, Italy in 2016. In 2021, she obtained the PhD degree in Applied Physics from the University of Jyväskylä, Finland. Her thesis was focused on the radiation effects and reliability of commercial SiC power devices for high-energy physics, space and avionic applications. Since 2021, she joined the...

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  17. 12. Session 2: Design of SEE-Immune Silicon Carbide Power Devices for High Power Space Applications
    Arijit Sengupta (Vanderbilt University)
    08/11/2023, 17:06

    Bio:

    Arijit Sengupta is a 3rd year Doctoral Student in the Electrical and Computer Engineering Department at Vanderbilt University in Nashville, TN, USA. His research interests include experimental analysis of radiation effects in power semiconductor devices. At present, he is part of the Vanderbilt team working on the Lunar Surface Technology Research (LuSTR) project from NASA, which...

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  18. 13. Session 2: Pre-qualification of COTS to Single Event Latchup using a pulsed laser
    Samuel Dubos
    08/11/2023, 17:24

    Bio:

    Samuel Dubos is a radiation engineer at TRAD. He received his master’s degree in Applied Physics from INSA (France). His work is focused on the study of Single Event Effects in electronic devices and includes analysis for the industry and R&D activities, in particular on alternative test methods to heavy ions, such as the pulsed laser.

    Abstract:

    In the New Space context, more and...

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  19. 14. Session 2: Improvement of SEB Threshold in β-Ga2O3 Schottky Diodes
    Sajal Islam (Vanderbilt University)
    08/11/2023, 17:42

    Bio:

    Ph.D. student at Vanderbilt University, working with the Radiation Effects and Reliability Group under Prof. Ron Schrimpf as my advisor. Single-event burnout in WBG devices is my area of research focus and I work on GaO, SiC, and GaN technologies.

    Abstract:

    Beta-gallium oxide (β-Ga2O3) stands as an ultrawide-bandgap (UWBG) material, with a bandgap of 4.6-4.9 eV, along with an...

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  20. 63. Announcement & Closing 1st Day
    Ennio Tito Capria
    08/11/2023, 18:00
  21. 64. Announcements
    Ennio Tito Capria, Dr Gerd Luis Datzmann
    09/11/2023, 09:00
  22. 67. Keynote Talk 2: Radiation Qualification of Microelectronic Technologies and Components: A Semiconductor Company’s Perspective
    Victor Malherbe (STM)
    09/11/2023, 09:05

    As an integrated device manufacturer (IDM), STMicroelectronics not only develops a number of technology platforms, but also leverages this portfolio to design a broad range of products and solutions for various customers. Thus, looking into radiation-reliable applications, unlike a pure semiconductor foundry, ST is able to provide rad-hard by design IP blocks, or safety measures at...

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  23. 71. Session 3: Industry-relevant results gained from RADNEXT Joint Research Activities
    Francoise Bezerra
    09/11/2023, 09:35
  24. 19. Session 3: Fiber optic radiation sensing for nuclear and dismantling industries
    Sylvain Girard
    09/11/2023, 09:40
  25. 20. Session 3: Hybrid Radiation Hardening Approach: a RISC-V System-on-Chip case study
    Andre Mattos
    09/11/2023, 10:00

    The NewSpace missions and applications are increasingly demanding processors with high computational capabilities, while simultaneously maintaining low power consumption and flexibility. Soft- core processors have emerged as a viable alternative that can meet these requirements but need to be hardened to operate in harsh environments. In this work, we propose and apply fault tolerance...

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  26. 21. Session 3: TID testing: High energy X-ray generator as an alternative to Cobalt 60
    Vincent Girones
    09/11/2023, 10:40

    Electronic devices used in many space, military, accelerator and nuclear power plants systems may be exposed to Total Ionizing Dose. For the use of these devices, it is essential to have test methods to determine the hardness in a radiative environment. Cobalt-60 is the most common radiation source used for total ionizing dose testing of electronic components. 60-Co is usually considered as...

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  27. 22. Session 3: SEE Cross Section prediction using PredicSEE tool
    Cleiton Marques
    09/11/2023, 11:00

    In the last decades, several simulation tools were created with the objective of analyzing Single Event Effects (SEE). In this sense, Monte Carlo (MC) simulations have been extensively used. Considering some experimental data as a basis, the results of the MC simulations provide the SEE probability for a wide range of particles and energies, which would not be accessible experimentally....

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  28. 73. RADNEXT Facility Infrastructure: Introduction
    Dr Gerd Luis Datzmann
    09/11/2023, 11:20
  29. 72. RADNEXT Facility Infrastructure: Discussion
    09/11/2023, 11:25
  30. 68. Keynote Talk 3: Characterization of EEE parts against cosmic rays induced effects: future trends and needs
    Frédéric Lochon (ALTER Technology)
    09/11/2023, 11:45

    Space market evolution towards more flexible, agile and integrated systems, such as Smallsats or satellite constellations, is pushing the use of more complex EEE parts.
    Newspace market particularly accelerated the introduction, in space units, of COTS devices, i.e. components not designed to endure space environment constraints, generating, in fact, a strong demand to evaluate parts behavior...

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  31. 66. Closing Remarks
    09/11/2023, 12:15
  32. 65. Announcement for the site visits
    Dr Gerd Luis Datzmann
    09/11/2023, 13:55
  33. 75. Visit of CHARM #1
    09/11/2023, 14:30
  34. 74. Visit of the Synchrocyclotron and ATLAS Visitor Center
    09/11/2023, 14:30
  35. 76. Visit of CHARM #2
    09/11/2023, 16:30
  36. 16. Announcement & Closing 1st Day
    Ennio Tito Capria
  37. 53. Announcement for the site visits
    Dr Gerd Luis Datzmann
  38. 31. Announcements
    Ennio Tito Capria, Dr Gerd Luis Datzmann
  39. 27. CHARM visit
  40. 25. Closing Remarks
  41. 9. Discussion
  42. 15. Discussion
  43. 57. G-RADNEXT 2023 Introduction
    Enrico Chesta (CERN)
  44. 50. Institutional welcome from the RADECS association
    Francoise Bezerra
  45. 1. Introduction 1
    Ruben Garcia Alia (CERN)
  46. 2. Introduction 2
    Ennio Tito Capria
  47. 3. Keynote Talk 1: To be announced
    Oral
  48. 18. Keynote Talk 2: Radiation Qualification of Microelectronic Technologies and Components: A Semiconductor Company’s Perspective
    Victor Malherbe (STMicroelectronics)

    As an integrated device manufacturer (IDM), STMicroelectronics not only develops a number of technology platforms, but also leverages this portfolio to design a broad range of products and solutions for various customers. Thus, looking into radiation-reliable applications, unlike a pure semiconductor foundry, ST is able to provide rad-hard by design IP blocks, or safety measures at...

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  49. 23. Keynote Talk 3: Characterization of EEE parts against cosmic rays induced effects: future trends and needs
    Marc Marin (ALTER TECHNNOLOGY)

    Space market evolution towards more flexible, agile and integrated systems, such as Smallsats or satellite constellations, is pushing the use of more complex EEE parts.
    Newspace market particularly accelerated the introduction, in space units, of COTS devices, i.e. components not designed to endure space environment constraints, generating, in fact, a strong demand to evaluate parts behavior...

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  50. 17. Networking Buffet
  51. 24. Poster Session & Lunch Break
  52. 52. RADNEXT Facility Infrastructure: Discussion
  53. 51. RADNEXT Facility Infrastructure: Introduction
    Dr Gerd Luis Datzmann
  54. 28. Session 1: Industry-relevant results gained from RADNEXT Transnational Access: Introduction
    Salvatore Fiore (CERN)
  55. 29. Session 2: Young professionals from academia and industry: Introduction
  56. 32. Session 3: Industry-relevant results gained from RADNEXT Joint Research Activities: Introduction
  57. 26. Site Visits
  58. 55. Visit of CHARM #1
  59. 56. Visit of CHARM #2
  60. 54. Visit of the Synchrocyclotron and ATLAS Visitor Center