Speaker
Description
This project focuses on the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm−3) with a 50 µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated at RAL and Carleton University.
In this talk, updates on the diode fabrication and electrical measurements of the structures will be given. The focus of this talk will be on the characterisation of trap parameters obtained from Deep-Level Transient Spectroscopy (DLTS) and supplemented by Thermally Stimulated Current (TSC) measurements. Spectra for unirradiated and neutron-irradiated diode samples will be shown and their details collected from Arrhenius analyses will be listed. Lastly, DLTS and Charge Collection Efficiency (CCE) measurements conducted on samples before and after neutron irradiation will be evaluated and their results compared.
