Speaker
Mr
Jairo Antonio Villegas Dominguez
(IMB-CNM (CSIC))
Description
In this contribution we will present measurements on LGADs corresponding to our CNM’s second production run based on 6-inch, 50µm active layer thick, Si-Si wafers (6LG2-v2 technology). The wafers were carbon enriched using five different implantation doses and one implantation energy. For the gain layer, samples were fabricated using a single boron implantation dose and energy. Measurements and analysis of the electrical characterization and radiation hardness were carried out on these LGADs.
Author
Mr
Jairo Antonio Villegas Dominguez
(IMB-CNM (CSIC))
Co-authors
Dr
Giulio Pellegrini
(IMB-CNM (CSIC))
Mr
Milos Manojlovic
(IMB-CNM (CSIC))
Dr
Neil Moffat
(IMB-CNM (CSIC))
Dr
Salvador Hidalgo Villena
(IMB-CNM (CSIC))
