Speaker
Description
Authors: Kevin Lauer1,2, Aaron Flötotto2, Katharina Peh2, Robin Müller2, Wichard Beenken2, Erich Runge2, Dirk Schulze2, Stefan Krischok2, Thomas Ortlepp1
Affiliations: 1 CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany
2 TU Ilmenau, Institut für Physik and Institut für Mikro- und Nanotechnologien, Ilmenau, Germany
Abstract: Defects in silicon are known to occur in numerous different configurations each exhibiting different properties e.g. related to the interaction with charge carriers. In this contribution recent results of density functional theory calculations of the so-called “boron interstitial (B_i)” defect in silicon are shown and compared to an already existing model of that defect. The “boron interstitial” defect means that a boron and a silicon atom share one lattice position. Configurations of that defect where the silicon interstitial atom is one or more lattice constants away from the boron atom are not considered. The acceptor removal phenomenon (ARP) which impacts low gain avalanche detectors (LGAD) is discussed on the basis of these recent results.
