Single Event Burnout in thin silicon sensors

30 Nov 2023, 16:20
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

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Speaker

Marco Ferrero (Universita e INFN Torino (IT))

Description

The Single Event Burnout (SEB) was observed for the first time in 50µm-thick LGAD, and studied by ATLAS and CMS collaborations during the R&D activity on LGAD sensors for their respective timing detector.
The experimental results observed on particle beam showed that, in 50µm-thick silicon sensors, the SEB occurs at bulk electric fields of 11.5-12 V/µm.
In this contribution, we report SEB results recently obtained on silicon sensors with active thickness between 15µm and 55µm. Beam tests at DESY and CERN facilities, performed during the last year, showed a relationship between the active thickness of the sensor and the burnout electric field.

Primary author

Marco Ferrero (Universita e INFN Torino (IT))

Co-authors

Arianna Morozzi (INFN, Perugia (IT)) Federico Siviero (INFN - National Institute for Nuclear Physics) Francesco Moscatelli (IOM-CNR and INFN, Perugia (IT)) Leonardo Lanteri (Universita e INFN Torino (IT)) Luca Menzio (Universita e INFN Torino (IT)) Nicolo Cartiglia (INFN Torino (IT)) Roberta Arcidiacono (Universita e INFN Torino (IT)) Roberto Mulargia (University & INFN Turin (IT)) Valentina Sola (Universita e INFN Torino (IT))

Presentation materials