Conveners
LGAD
- Gregor Kramberger (Jozef Stefan Institute (SI))
LGAD
- Valentina Sola (Universita e INFN Torino (IT))
LGAD
- Anna Macchiolo (University of Zurich (CH))
LGAD
- Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
LGAD
- Nicolo Cartiglia (INFN Torino (IT))
In this contribution we present an update about the development of Monolithic Active Pixel Sensors (MAPS) at INFN in the framework of the ARCADIA project. Thanks to the first two engineering runs, manufactured in 2020 and 2021 with a 110 nm CMOS process, the device concept has been well assessed and tested, both through extensive laboratory characterizations and the comparison between...
The Low Gain Avalanche Detector (LGAD) technology is proposed for the ATLAS High Granularity Timing Detector (HGTD) towards the High-Luminosity Large Hadron Collider (HL-LHC). USTC-IME LGADs are designed by the University of Science and Technology of China (USTC) and fabricated by the Institute of Microelectronics of Chinese Academy of Science (IME, CAS). The prototypes of the USTC-ME LGAD are...
In this contribution we will present measurements on LGADs corresponding to our CNM’s second production run based on 6-inch, 50µm active layer thick, Si-Si wafers (6LG2-v2 technology). The wafers were carbon enriched using five different implantation doses and one implantation energy. For the gain layer, samples were fabricated using a single boron implantation dose and energy. Measurements...
The EXFLU1 batch of LGAD sensors on substrates of thickness between 15 and 45 $\mu$m were exposed to various radiation grades between 1 $\times$ 10$^{-14}$ and 5 $\times$ 10$^{-15}$ n$_{\mathrm{eq}}$cm$^{-2}$ using the neutron reactor at JSI. The sensor designs themselves, manufactured at FBK, are optimised to preserve characteristics at high fluences. The latest studies of the effects of...
This contribution presents the first study of the spatial resolution of an array of RSD2 450 um pitch pixels. The results have been obtained in the latest test beam at the DESY 6 GeV/c electron line.
The readout board is based on the FAST2 ASIC, a 16-channel fast amplifier chip developed in Torino.
The results demonstrate that resistive readout yields a spatial resolution smaller than 5% of...
The LGAD technology is of great interest for high-energy physics (HEPs) as a 4-D tracking device and has been qualified for use in the timing detectors of the CMS and ATLAS experiments for the high luminosity upgrade of the LHC (HL-LHC). During the operation in strong radiation fields, the radiation damage progressively leads to performance degradation of LGADs, which therefore need a more...
AC-LGAD (AC coupled Low-Gain Avalanche Detector) sensors have emerged as a highly promising technology for precision particle detection in collider experiments. These sensors offer exceptional capabilities, delivering remarkable time and spatial resolutions on the order of tens of micrometers and picoseconds, all while achieving a 100% fill factor. We present results obtained with AC-LGAD...
The Trench Isolated LGAD (TI-LGAD) technology offers a promising solution to LGAD's fill factor limitations, enabling small segmentation of fast timing silicon sensors for collider experiments. Previous laboratory studies with this technology have already shown similar timing performance and radiation hardness as for the LGAD technology, with a drastic improvement of the fill factor (reduction...
Authors: Kevin Lauer1,2, Aaron Flötotto2, Katharina Peh2, Robin Müller2, Wichard Beenken2, Erich Runge2, Dirk Schulze2, Stefan Krischok2, Thomas Ortlepp1
Affiliations: 1 CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany
2 TU Ilmenau, Institut für Physik and Institut für Mikro- und Nanotechnologien, Ilmenau, Germany
Abstract: Defects in silicon are known to occur in numerous...
HPK has produced LGADs where boron was not fully activated after the implantation. This was an attempt to reduce acceptor removal in the gain layer by formation of defect complexes of non-activated interstitial boron atoms with radiation induced interstitial silicon atoms and other impurities. In this was the replacement of activated boron by interstitial silicon in the lattice position would...
In this presentation, we continue our investigation of charge-space profiles in segmented LGADs with a focus on double-trenched LGADs (2Tr LGAD). We compare the signal behavior of the Ti-LGAD sample with double trenches in the interpad ( IP) region to that of LGADs with 2p-stops and bias rings used as isolation structures (both types produced in the Ti-LGAD RD50 batch with difference that...
We present the continuation of our research on IP signals in Ti-LGAD (Wafer 11). Our experimental examination on Ti-LGAD, from the wafer 11, revealed exceptionally high signals within the IP region, which was significantly higher than the signals measured in previously conducted experiments [1] on the segmented LGAD sample with two p-stops and a bias ring in the center of the IP region with...
We propose a novel methodology to measure the electric field of LGAD. This method introduces the estimation of the elongation of the carrier cluster caused by diffusion and the divergence of the electric field force during its drift along the detector. The maximum of time derivative tested from edge-TCT is extracted to quantify the dispersion of the light-induced carriers. Both RASER...
The Single Event Burnout (SEB) was observed for the first time in 50µm-thick LGAD, and studied by ATLAS and CMS collaborations during the R&D activity on LGAD sensors for their respective timing detector.
The experimental results observed on particle beam showed that, in 50µm-thick silicon sensors, the SEB occurs at bulk electric fields of 11.5-12 V/µm.
In this contribution, we report SEB...
LGAD sensors with a carbon-enriched multiplication layer are the state-of-the-art in terms of radiation resistance, concerning this specific sensor technology. The presence of carbon allows LGADs to operate, while maintaining unchanged temporal resolution, even after irradiation fluences of 1-2x10^15 neq/cm^2.
Carbonated LGADs have been successfully produced by FBK, CNM and IHEP-IEM. FBK,...
The High Luminosity Large Hadron Collider upgrade will increase the luminosity of the LHC by a factor of 10. Low gain avalanche detectors (LGADs) promise excellent timing resolution, which can mitigate the pileup associated with high luminosity. The most highly irradiated LGADs will be subject to 2.5 × 10^15neq /cm2 of hadron fluence during Run 4; their timing performance must tolerate this....
Low Gain Avalanche Diodes (LGADs) represent the state-of-art technology in fast timing measurement for charged minimum ionizing particles (MIPs). LGADs are initially developed for future Timing Detectors in the ATLAS and CMS experiments at the High-Luminosity LHC. One of LGADs’ key features is the gradient-doped multiplication layer providing intrinsic gain. The intrinsic gain enables the...
PIONEER is a next-generation experiment proposed at the Paul Scherrer Institute to perform high precision measurements of rare pion decays. By improving the precision by an order of magnitude on the charged-pion branching ratio to electrons vs. muons and the pion beta decay, PIONEER will provide a pristine test of Lepton Flavour Universality and the Cabbibo angle anomaly. At the centre of the...
Devices with internal gain, such as Low Gain Avalanche Diodes (LGADs) can have O(30) ps timing resolution. They play a crucial role in High Energy Physics (HEP) experiments. Similarly, resistive silicon devices, such as AC-coupled LGADs (AC-LGADs) sensors, achieve a fine spatial resolution while maintaining the LGAD’s timing resolution. Devices of both types, with varying gain-layer width and...
We present the results of the Radiation Tolerance Study (Electrical and Radioactive Source characterization) performed at the IFCA on Carbonated-Enriched Gain-Layer small devices (single diode) from the Run #15973 production of CNM-IMB.
