Speaker
Toko Hirono
(Japan Synchrotron Radiation Research Institute)
Description
This study describes a CdTe pixel detector development for the next generation high energy X-ray diffraction experiments at synchrotron radiation facilities. In such applications, a high stopping-power semiconductor material for the sensor and an X-ray photon counting capability for the ASIC are required. A Custom-designed ASIC (SP8-02) has been developed with TSMC 0.25 micron CMOS process, where each pixel has a preamplifier, a shaper, a window comparator, and a 20-bit counter. The analog circuit was characterized with a fast setting of 100 nsec and a dynamic range from 10 keV to 100 keV. The window comparator has advantage to avoid electric noise and fluorescent X-ray background by the lower threshold and higher-harmonics beam contamination by the upper threshold. We have fabricated a Pt/CdTe/Al-pixel sensor performing a Schottky diode detector with the electron-readout operation. This electrode-metal configuration realized a low leakage current and a long-term stability in near room temperature. The sensor was bump-bonded to the ASIC by the gold-stud bonding. The presentation will describe the features of SP8-02 and SP8-02B ASICs forming the 200 um x 200 um pixel size with the 20 x 50 matrix. The Pt/CdTe/Al-pixel sensor performance will be also discussed in comparison with Pt/CdTe/Pt-pixel and In/CdTe/Pt-pixel sensors.
Author
Toko Hirono
(Japan Synchrotron Radiation Research Institute)
Co-authors
Goro Sato
(JAXA)
Hidenori Toyokawa
(Japan Synchrotron Radiation Research Institute)
Hirokazu Ikeda
(JAXA)
Morihiro Kawase
(Japan Synchrotron Radiation Research Institute)
Shin Watanabe
(JAXA)
Shukui Wu
(Japan Synchrotron Radiation Research Institute)
Tadayuki Takahashi
(JAXA)
Toru Ohata
(Japan Synchrotron Radiation Research Institute)
Yukito Furukawa
(Japan Synchrotron Radiation Research Institute)
