17–21 Jun 2024
CERN
Europe/Zurich timezone

Development of MAPS using 55nm HVCMOS process for future tracking detectors

17 Jun 2024, 12:30
20m
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium

CERN

400
Show room on map
WG1 - Monolithic Sensors WG/WP1 - CMOS technologies

Speaker

Yiming Li (Institute of High Energy Physics, Chinese Academy of Sciences (CN))

Description

The High-Voltage CMOS technology is intrinsically radiation-hard and fast at charge collection, making it a promising technological option for tracking detectors at future experiments requiring large-area coverage, high spatial resolution and radiation tolerance. Such examples are LHCb Upstream Trackers in Upgrade II, or inner tracking detector at Circular Electron-Positron Collider (CEPC). Previous R&D on HVCMOS mainly uses 180nm technology. To integrate more functionality in the front-end without substantially increasing the power consumption, we have been exploring sensors in smaller node of 55nm HVCMOS process. Two MPW have been submitted for COFFEE - CMOS sensOr in Fifty-FivE nanometer ProcEss. Preliminary tests are performed to study their IV and CV characteristics, and response to laser signal is observed.

Type of presentation (in-person/online) in-person presentation
Type of presentation (scientific results or project proposal) project proposal for future work

Author

Yiming Li (Institute of High Energy Physics, Chinese Academy of Sciences (CN))

Presentation materials