Speaker
Description
Low-Gain Avalanche Detectors (LGADs) based on 4H-SiC are emerging as a promising technology for high-radiation environments due to their intrinsic radiation hardness, wide bandgap, and high breakdown field. In this work, we present results from a systematic study of radiation-induced degradation in 4H-SiC LGADs subjected to 24 GeV/c proton irradiation at the CERN IRRAD facility, with fluences up to $6×10^{15} n_{eq}/cm^2$.
The devices were characterized before and after irradiation through I-V, C-V, and charge collection measurements under laser stimulation, focusing on the evolution of gain, leakage current, breakdown voltage, and depletion characteristics. Despite the high fluence, the devices retained measurable gain, and the charge collection remained functional, indicating a high degree of resilience compared to their silicon counterparts.
Our findings highlight the potential of SiC LGADs for future applications in harsh radiation environments such as high-luminosity collider detectors or space-based instrumentation. The study also provides insight into defect-related performance degradation and guides the ongoing optimization of SiC-based avalanche detector designs.
| Workshop topics | Sensor materials, device processing & technologies |
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