Conveners
Front-end Electronics and Imaging Theory
- Matthieu Boone
The increased flux of coherent high-energy (> 20 keV) photons at fourth generation light sources enables many new experimental possibilities. At such energies, the absorption efficiency of Si (Z = 14) sensors is < 50 %. As the photoelectric absorption cross-section increases with the average atomic number (Z) of a sensor, materials such as GaAs:Cr (Z$_{\textrm{Av}}$ = 32) and CdZnTe...
We present the first characterization results of a single-chip prototype of the DECTRIS JUNGFRAU detector, a hybrid charge-integrating readout ASIC based on the original concept developed at the Paul Scherrer Institut (PSI) [1]. The prototype features 75 µm pitch pixels in a 256×256 array, for an active area of 2×2 cm², bump-bonded to a 450 µm p-on-n Si sensor. Designed specifically for...
We present advancements in image sensor technology combining Skipper Charge Coupled Devices (Skipper-CCDs) with CMOS imaging techniques to achieve exceptional low-noise and high-speed readout capabilities. The Skipper-in-CMOS image sensor merges the non-destructive readout advantage of Skipper-CCDs with the high conversion gain of a pinned photodiode and integrated in-pixel signal processing...
The 26th Workshop on Radiation Imaging Detectors, the IWORID 2025, will be closed.