Speaker
Description
Low Gain Avalanche Detectors (LGADs) are the technology of choice for the timing detectors of the upcoming ATLAS and CMS upgrades at the High-Luminosity Large Hadron Collider (HL-LHC) due to their good timing resolution and signal-to-noise (S/N) ratio. Their performance, however, is limited for low-penetrating particles in p-type devices, since the charge multiplication mechanism differs for electrons and holes. A novel approach based on n-type LGADs, developed at Centro Nacional de Microelectrónica (IMB-CNM, Spain), addresses this limitation and shows potential for applications such as low-energy particle and soft X-ray detection. Although mainly intended for non-High-Enegy Physics (HEP) fields, these devices are also relevant for HEP R&D, allowing direct comparison with conventional p-type LGADs.
In this work, electrical and charge collection studies of n-LGADs and PiN structures fabricated at IMB-CNM are presented. Devices were irradiated with 23 GeV protons to fluences up to $\Phi = 2.5 \times 10^{15}\ \text{p/cm}^2$, including stepwise irradiation of one sample up to $\Phi = 1 \times 10^{13}\ \text{p/cm}^2$. Results from capacitance-voltage (C–V), current-voltage (I–V), Transient Current Technique (TCT), and edge-TCT measurements are reported and compared.
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