30 July 2026 to 5 August 2026
Natal, Brazil
America/Sao_Paulo timezone

Detailed simulation of the LHCb VELO pixel silicon sensors

Not scheduled
20m
Natal, Brazil

Natal, Brazil

Via Costeira Sen. Dinarte Medeiros Mariz, 6664-6704 - Ponta Negra, Natal - RN, 59090-002
Poster (early career: student or postdoctoral researcher) Operation, Performance and Upgrade of Present Detectors

Speaker

Pedro Nogarolli (Federal University of Rio de Janeiro (BR))

Description

The LHCb experiment at CERN’s Large Hadron Collider (LHC) is a single-arm forward spectrometer designed for precision heavy-flavour physics. The precise reconstruction of both primary and secondary decay vertices is essential for LHCb physics programme. This capability is provided by the VErtex LOcator (VELO), a crucial subdetector consisting of double-sided silicon hybrid pixel modules operating in a secondary vacuum, in close proximity (~5 mm) to the high-radiation LHC interaction point. The VELO was designed to maintain high charge collection efficiency and spatial resolution under this intense radiation environment, which is expected to reach an integrated fluence of 8×1015  \mev  neq/cm28×1015\mevneq​/cm2 over its expected lifetime.

Modelling the impact of radiation damage in these pixel sensors is crucial to improve the agreement between LHCb Monte Carlo and data. A simulation chain has been designed to model the charge deposition, drift, induced signal, and the resulting cluster map of a 3x3 pixel matrix. The software Technology Computer-Aided Design (TCAD) is used to model the pixel's geometry, doping and electric field profiles at different irradiations. These are then handed over to Garfield++, to simulate the carriers drift and its signal induction. Non-irradiated results are compared with test beam data, which shows significant agreement.

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Authors

David Friday (The University of Manchester (GB)) Pedro Nogarolli (Federal University of Rio de Janeiro (BR)) Victor Coco (CERN) Vinicius Franco Lima (Federal University of Rio de Janeiro (BR))

Presentation materials

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