Conveners
LGAD 2
- Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))
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Pablo Fernandez-Martinez (IMB-CNM, CSIC)18/02/2026, 11:05LGADOral
n-type LGAD detectors, with a p++/n+/n/n++ structure, are an emerging technology for the detection of shallow-penetrating radiation. However, experiments show that their gain layer is prone to radiation damage, exhibiting a more pronounced vulnerability compared to p-substrate LGADs. This effect was studied in our previous work and attributed to the donor removal mechanism, which remains under...
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Ludovico Massaccesi18/02/2026, 11:25LGADOral
We present the results from a new batch of silicon sensors with internal gain produced by the Fondazione Bruno Kessler (FBK, Italy). The sensors are p-in-n Low-Gain Avalanche Diodes, in which the high-concentration implant responsible for signal multiplication is formed by an n-type dopant (nLGAD). The nLGADs are made on thin epitaxial-type substrates, with an active thickness of 55 $\mu$m. A...
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Kevin Lauer (CIS Institut fuer Mikrosensorik GmbH (DE))18/02/2026, 11:45LGADOral
Kevin Lauer,1 Thomas Klein,1 Stephanie Reiss,1 Christian Möller,1 Thomas Ortlepp,1 Stefan Meyer2 and Wolfgang Berger2
1CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
2Carl Zeiss Microscopy GmbH, Carl-Zeiss-Straße 22, 73446 Oberkochen, GermanyLow gain avalanche detectors (LGAD) are used to detect photons and particles with a medium internal...
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Francesca Capocasa18/02/2026, 12:05LGADOral
Recent developments in X-ray technology have highlighted a significant gap between the advancements in X-ray facility capabilities and the corresponding limitations in detector technologies, especially in the soft X-ray energy range (200 eV to 2 keV). While hybrid pixel detectors are the standard for higher-energy X-ray applications (2–20 keV), their implementation in the soft X-ray regime...
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