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Description
This work presents the development and experimental characterisation of a Monolithic Active Pixel Sensor (MAPS) developed within the ARCADIA project. The sensor is fabricated in a modified 110 nm CMOS process featuring an n-type high-resistivity substrate and a fully depleted active thickness ranging from 50 μm to 500 μm. The design integrates in-pixel electronics isolated by deep p-well implants, enabling low-power operation (O(10 mW/cm²)) and enhanced radiation tolerance.
A key aspect of this study is the implementation of an edge-on sensor alignment geometry, which increases the effective X-ray interaction path length in silicon. Spectral performance is evaluated using a dedicated X-ray spectroscopy setup with Molybdenum (Mo Kα₁, Kα₂) emission lines at 17.48 keV and 17.37 keV. Data analysis based on DBSCAN clustering and spatial hit mapping demonstrates stable detector response and reliable event reconstruction over a tube voltage range of 40–140 kV.
The results indicate consistent depth-of-interaction behaviour and good spectral stability, highlighting the potential of the sensor for applications in medical imaging (e.g. proton CT), space-borne X-ray instrumentation, and future high-energy physics vertex detectors.*