Speaker
Jennifer Jentzsch
(Technische Universitaet Dortmund (DE))
Description
For the first ATLAS pixel upgrade scheduled in 2013 a new front-end chip generation (FE-I4) has been developed. The second version (FE-I4B) hosting two different solid-state sensor technologies (planar silicon and 3D silicon) has been produced to be built into a new pixel layer (the Insertable B-Layer, IBL). Prototypes of these assembled modules have been tested in laboratory and testbeam measurements before and after irradiation.
Summary
Quality assurance measurements under clean room conditions, including temperature and humidity control, have been and will be performed on the required parts during the various production steps of the IBL, namely connectivity as well as electrical tests and signal probing on individual parts and also assembled subsystems. Test results of measurements on flexes, modules and staves will be presented.
Author
Jennifer Jentzsch
(Technische Universitaet Dortmund (DE))
