Speaker
Markus Gabrysch
(CERN)
Description
Preliminary results on the extraction of detrapping time constants for both electrons and holes obtained from red laser TCT measurements. Based on DLTS scans from 10-50°C the trapping levels and cross sections were obtained for highly p-irradiated silicon diodes.
Authors
Prof.
Mara Bruzzi
(INFN and University of Florence)
Markus Gabrysch
(CERN)
Co-authors
Irena Dolenc Kittelmann
(Ohio State University (US))
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Michael Moll
(CERN)
Nicola Pacifico
(Universite Montpellier II (FR))
