Speaker
Gregor Kramberger
(Jozef Stefan Institute (SI))
Description
Special diodes were designed on RD50 multiplication mask which combine the ease of use of a pad-detector with electric field of a strip detector. A series of charge collection measurements was performed with diodes of different implant properties and thicknesses. The diodes were irradiated in steps with neutrons to the total accumulated fluence of 1e16 cm-2. Charge collection efficiency for 90Sr was measured at each fluence step and the values were compared between the wafers with different properties.
Author
Gregor Kramberger
(Jozef Stefan Institute (SI))
Co-authors
Igor Mandic
(Jozef Stefan Institute (SI))
Marko Mikuz
(Jozef Stefan Institute (SI))
Vladimir Cindro
(Jozef Stefan Institute (SI))
