Speaker
Coralie Neubuser
(Hamburg University (DE))
Description
Silicon n-type test-diodes made of FZ and MCz material were manufactured for the CMS HPK campaign and irradiated with 23 MeV protons. At a fluence of 3e14/cm2 neq the MCz n-type diodes demonstrated a clear type inversion directly after irradiation without exhibiting a strong double junction effect. This is unexpected compared to results measured on MCz diodes from RD50 and irradiated with 23 GeV protons. Because of previous results on this batch of sensors revealing process induced bulk defects, it was investigated whether this type inversion is a result of the material defects or an effect of the lower proton energy of 23 MeV, compared to the RD50 irradiations at 23 GeV.
An additional set of these sensors was irradiated by 23 GeV protons and has been characterized electrically by means of capacitance-voltage (C-V) and current-voltage (I-V) measurements. Transient current technique pulses (TCT) and charge collection efficiency (CCE) measurements have proven a dependence of the bulk damage on the proton energy. Moreover RD50 diodes were irradiated with 23 MeV protons, electrically characterised and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage can be confirmed. Microscopic measurements will be performed in order to get a deeper understanding for the difference of the induced defects from the two different proton energies.
Author
Coralie Neubuser
(Hamburg University (DE))
Co-authors
Alexandra Junkes
(Brown University)
Doris Eckstein
(DESY)
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
Erika Garutti
(DESY)
Dr
Georg Steinbrueck
(Hamburg University (DE))
Joachim Erfle
(Hamburg University (DE))
Thomas Poehlsen
(University of Hamburg)
