Speaker
Dr
Leonid Makarenko
(Belarusian state University)
Description
We have found that the single silicon self-interstitial atoms can be kept essentially immobile in p-type materials upon irradiation with alpha-particles at room temperature or low intensity electron irradiation at liquid nitrogen temperature. The conclusion is based on observations of the formation of interstitial carbon related defects due to an interaction of self-interstitial (I) with substitutional carbon (Cs) (Watkins replacement mechanism) in the course of isochronal annealing of irradiated samples. We also have found that the relative probabilities of Sii reaction with carbon and boron are controlled with electronic excitation.
Activation energies of interstitial atom migration (both I and Ci) do not depend essentially on germanium content in SixGe1-x alloys (x<2 %).
To explain the observed experimental evidences a model of self-interstitial reactions in p-type silicon is suggested. This model predicts the dependence of the rate for I annealing on Fermi level position. The prediction is confirmed experimentally.
Author
Dr
Leonid Makarenko
(Belarusian state University)
Co-authors
Michael Moll
(CERN)
Dr
Nikolay Abrosimov
(Leibniz Institute for Crystal Growth, Berlin, Germany)
Dr
Stanislav Lastovskii
(Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus)
