Speaker
Mathieu Benoit
(CERN LCD)
Description
Modern Technology-Computer-Assisted Design (TCAD) tools allow for detailed simulation of various physics processes in silicon radiation detector. I present a review of the features of the main available commercial simulation softwares and how they can be used to simulate the main effects of non-ionizing radiation damage in Silicon.
Example of simulation of Space-Charge sign inversion, double electric field peak and charge multiplication will be presented. Strategy to obtain better quantitative results from simulation through a careful calibration of physical parameters will also be discussed.
Author
Mathieu Benoit
(CERN LCD)
