Speaker
Jerome Baudot
(Institut Pluridisciplinaire Hubert Curien (FR))
Description
CMOS pixel sensors (CPS) with a column parallel read-out architecture and developed in a 0.35 um technology have already met the requirements of several high energy projects (EUDET, STAR-HFT, ILC) where spatial resolution and material budget govern the specifications. The full potential of CPS is however not yet reached, and can answer the demand of future vertex detectors (ALICE, SuperB, eIC) for faster integration time and stronger radiation tolerance, on condition to exploit a CMOS process with the appropriate characteristics.
In this context, we report on the in-beam test of a CPS prototype fabricated in a 0.18 um technology processed over a low doping epitaxial layer. Results indicate excellent charge collection properties greatly alleviating the irradiation effect up to the range of 1014 n_eq/cm2 and 1 MRad. This observation holds as well for rectangular-shape pixels, which offer the added value of a reduced integration time in the proposed read-out architecture.
Based on these achievements, we indicate the development path toward sensors featuring integration time much below 50 microsecond or large wedge-shape surface for forward tracking, always using the initial column-parallel read-out approach. Our conclusion underlines that the virtue of this architecture lies in its low power dissipation, a few 100 mW/cm2. Indeed it guarantees to keep the benefit of the genuine very low material budget of monolithic sensors, of prime importance for tracking systems.
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Primary author
Jerome Baudot
(Institut Pluridisciplinaire Hubert Curien (FR))
