The High-Voltage Monolithic Active Pixel Sensor for the Mu3e Experiment

5 Jun 2014, 11:00
20m
Berlagezaal (Beurs van Berlage)

Berlagezaal

Beurs van Berlage

Oral Sensors: 1b) Semiconductor Detectors I.b Semiconductors

Speaker

Dr Shruti Shrestha (Physikalisches Institut Heidelberg)

Description

The Mu3e experiment searches for the lepton flavor violating decay $\mu^{+}\rightarrow e^{+}e^{-}e^{+}$. We are aiming for a sensitivity of one in $10^{16}$ $\mu$-decays. To measure the momentum and vertex position of low momentum electrons (10 - 53 MeV/c) originating from such a rare decay with high precision, a tracking detector built from High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) is implemented. The MUPIX chips are HV-MAPS designed for Mu3e and are implemented in 180 nm HV-CMOS technology. HV-MAPS is the technology of choice because it can be thinned to 50~$\mu$m, is radiation-tolerant, has a high time resolution, and is low cost. Furthermore, the pixel electronics are embedded inside the sensor chip to reduce the material budget. Performance results of the MUPIX4 chip are presented. In 2013, we tested the MUPIX4 chip using a 1 - 6~GeV electron beam at DESY. The discussed results include the spatial resolution, time resolution, and efficiency of the MUPIX4 chip.

Primary author

Dr Shruti Shrestha (Physikalisches Institut Heidelberg)

Presentation Materials