Conveners
I.b Semiconductors: Session 1
- Vincenzo Chiochia (Universitaet Zuerich (CH))
I.b Semiconductors: Session 2
- Jaap Velthuis
I.b Semiconductors: Session 3
- Vincenzo Chiochia (Universitaet Zuerich (CH))
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
6/3/14, 4:30 PM
Sensors: 1b) Semiconductor Detectors
Oral
The revised schedule for the LHC upgrade foresees a significant increase of the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity-LHC). The final upgrade is planned for around 2023, followed by the HL-LHC running. This is motivated by the need to harvest the maximum physics potential from the machine. It is clear that the high integrated luminosity of 3000 fb-1 will...
Paul Dervan
(University of Liverpool (GB))
6/3/14, 4:50 PM
Sensors: 1b) Semiconductor Detectors
Oral
Different pitch layouts are considered for the pixel detector being designed for the ATLAS upgraded tracking system which will be operating at the
High Luminosity LHC. The tracking performance in the Endcap pixel regions could benefit from pixel layouts which differ from the geometries used in the
barrel region. Also, the performance in different barrel layers and eta regions could be...
Dr
Dmitry Hits
(Eidgenoessische Tech. Hochschule Zuerich (CH))
6/3/14, 5:10 PM
Sensors: 1b) Semiconductor Detectors
Oral
Progress in experimental particle physics in the coming decade depends crucially upon the ability to carry out experiments at high energies and high luminosities. These two conditions imply that future experiments will take place in very high radiation areas. In order to perform these complex and perhaps expensive experiments new radiation hard technologies will have to be developed. ...
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
6/3/14, 5:30 PM
Sensors: 1b) Semiconductor Detectors
Oral
We present the results of the characterization performed on n-in-p pixel modules produced with thin sensors, ranging in thickness from 100 to 200 μm, assembled to the ATLAS FE-I3 and FE-I4 read-out chips.
Among these samples, the sensors produced at VTT (Finland), 100 μm thick, have been processed to obtain active edges, which considerably reduce the dead area at the periphery of the device...
Dr
Shruti Shrestha
(Physikalisches Institut Heidelberg)
6/5/14, 11:00 AM
Sensors: 1b) Semiconductor Detectors
Oral
The Mu3e experiment searches for the lepton flavor violating
decay $\mu^{+}\rightarrow e^{+}e^{-}e^{+}$. We are aiming for a sensitivity
of one in $10^{16}$ $\mu$-decays. To measure the momentum and vertex position of
low momentum electrons (10 - 53 MeV/c) originating from such a rare decay with
high precision, a tracking detector built from High-Voltage Monolithic Active Pixel...
Tianyang WANG
(IPHC)
6/5/14, 11:20 AM
Sensors: 1b) Semiconductor Detectors
Oral
The CMOS pixel sensor (CPS) based on the TowerJazz 180nm CIS process can provide qualified radiation hardness for the ALICE-ITS upgrade. Meanwhile, full CMOS integration in the pixel is achievable due to the availability of deep P-well. Therefore, a novel concept of pixel with integrated discriminator was realized to develop a fast and power efficient rolling shutter CPS architecture for the...
Lorenzo Paolozzi
(Universita e INFN Roma Tor Vergata (IT))
6/5/14, 11:40 AM
Sensors: 1b) Semiconductor Detectors
Oral
The results obtained at BTF (Beam Test Facility) of Frascati with 500 MeV electrons working at single electron mode and with cosmic rays have shown a time resolution of the order of 100 ps with a polycrystalline diamond detector of 1.25 mm total thickness and a surface of 3x3 mm^2 operated at 350 V. To achieve this performance, a new structure of the diamond detector and a dedicated front-end...
Fergus Wilson
(STFC - Rutherford Appleton Lab. (GB))
6/5/14, 12:00 PM
Sensors: 1b) Semiconductor Detectors
Oral
We report on the status and performance of the CMOS Monolithic Active Pixel Sensor (MAPS) Cherwell 1 and 2 sensors for the detection of charged particles in vertexing, tracking, and calorimetry applications. Cherwell is a 4-T CMOS sensor in 180 nm technology on a 12um epitaxial substrate with low-noise, low-power, in-pixel correlated double sampling, and high conversion gain.
Cherwell...
Toshinobu Miyoshi
(KEK)
6/5/14, 12:20 PM
Sensors: 1b) Semiconductor Detectors
Oral
Monolithic pixel detectors using 0.2 um FD-SOI pixel process have been developed since 2006. An SOI wafer is utilized for sensor and electronics. The top silicon is used for SOI-CMOS circuit, and the substrate is used for a radiation sensor. There is a buried oxide layer between two silicon materials, and these are connected each other through Tungsten via. SOI-CMOS circuit has smaller...
Shunsuke Honda
(University of Tsukuba (JP))
6/6/14, 2:00 PM
Sensors: 1b) Semiconductor Detectors
Oral
We are developing monolithic pixel sensors based on a 0.2 um fully-depleted Silicon-on-Insulator (SOI) technology. Such sensors have properties such as high-speed operation, low-power dissipation, and SEU/SET immunity. The major issue in applications them in high-radiation environments is the total ionization damage (TID) effects. The effects are rather substantial in the SOI devices since the...
Mr
Stefan Petrovics
(Semiconductor Laboratory of the Max-Planck Society)
6/6/14, 2:20 PM
Sensors: 1b) Semiconductor Detectors
Oral
Silicon Photomultipliers (SiPMs) are a promising candidate for replacing conventional photomultiplier tubes in many applications, thanks to ongoing developments and advances in their technology. A drawback of conventional SiPMs is their limited fill factor caused by the need for a high ohmic polysilicon quench resistor and its metal lines on the surface of the devices, which in turn limits the...
Yang ZHOU
(Institut Pluridisciplinaire Hubert Curien (FR))
6/6/14, 2:40 PM
Sensors: 1b) Semiconductor Detectors
Oral
The need for miniaturized and versatile real-time radiation monitors has become a general trend for spacecraft applications. It requires a highly integrated detection system with the ability to identify ion species in a high flux mixed environment. We have proposed [1] a new strategy to meet these requirements with a single CMOS pixel chip.
This sensor is based on a matrix of 50×50 µm2...
Mr
Robert Klanner
(University of Hamburg)
6/6/14, 3:00 PM
Sensors: 1b) Semiconductor Detectors
Oral
The response of p+n strip sensors to electrons from a 90Sr source and focussed laser light with different wave lengths was measured using the ALiBaVa read-out system. The measurements were performed over a period of several weeks, during which a number of operating conditions were varied. The sensors were fabricated by Hamamatsu on 200 µm thick float-zone silicon. Their pitch is 80 µm, and...
Dean Andrew Hidas
(Rutgers, State Univ. of New Jersey (US))
6/6/14, 3:20 PM
Sensors: 1b) Semiconductor Detectors
Oral
The Pixel Luminosity Telescopes (PLT) will be the first dedicated luminosity monitor installed in the CMS experiment at CERN's Large Hadron Collider. It is designed to measure the bunch-by-bunch relative luminosity to high precision. It consists of a set of small angle telescopes each with three planes of pixel sensors. The full PLT will be installed in CMS for the first full energy...
