Speaker
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Description
We present the results of the characterization performed on n-in-p pixel modules produced with thin sensors, ranging in thickness from 100 to 200 μm, assembled to the ATLAS FE-I3 and FE-I4 read-out chips.
Among these samples, the sensors produced at VTT (Finland), 100 μm thick, have been processed to obtain active edges, which considerably reduce the dead area at the periphery of the device down to 50 μm per side. This feature, together with the very reduced material budget, makes them attractive candidates to instrument the inner layers of the upgraded pixel system at HL-LHC.
n-in-p sensors, 200 μm thick, with a standard guard-ring, produced by CIS (Germany) are manufactured without an handle-wafer and they represent reliable and cost-effective detectors to cover the large surface of the outer layers of the new pixel system.
The different flavors of n-in-p pixel sensors are characterized by means of scans with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of 1.5x1016 neq cm-2 . The charge collection and tracking efficiency will be compared for the different sensor thicknesses.
Primary author
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Co-authors
Botho Albrecht Paschen
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Philipp Weigell
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Dr
Richard Nisius
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Stefano Terzo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
